FDV305N
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onsemi FDV305N

Manufacturer No:
FDV305N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 900MA SOT23
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The FDV305N is a 20V N-Channel MOSFET produced by onsemi, utilizing Fairchild’s high voltage PowerTrench process. This MOSFET is optimized for power management applications, offering high performance and low on-resistance. It is packaged in a SOT-23 format, making it suitable for a variety of compact designs.

Key Specifications

Parameter Min Typ Max Units
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGSS) ±12 V
Continuous Drain Current (ID) 0.9 A
Pulsed Drain Current (ID) 2 A
Maximum Power Dissipation (PD) 0.35 W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 357 °C/W
Gate Threshold Voltage (VGS(th)) 0.6 1 1.5 V
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 4.5V, ID = 0.9A 220 mΩ
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 2.5V, ID = 0.7A 300 mΩ

Key Features

  • Low on-resistance (RDS(on)) of 220 mΩ @ VGS = 4.5 V and 300 mΩ @ VGS = 2.5 V
  • High performance trench technology for extremely low RDS(on)
  • Fast switching speed
  • Low gate charge
  • Compact SOT-23 package

Applications

  • Load switch
  • Battery protection
  • Power management

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDV305N MOSFET?

    The maximum drain-source voltage (VDSS) is 20 V.

  2. What is the continuous drain current (ID) rating of the FDV305N?

    The continuous drain current (ID) is rated at 0.9 A.

  3. What is the thermal resistance, junction-to-ambient (RθJA), of the FDV305N?

    The thermal resistance, junction-to-ambient (RθJA), is 357 °C/W.

  4. What are the typical applications of the FDV305N MOSFET?

    Typical applications include load switching, battery protection, and power management.

  5. What is the gate threshold voltage (VGS(th)) range of the FDV305N?

    The gate threshold voltage (VGS(th)) range is from 0.6 V to 1.5 V.

  6. What is the on-resistance (RDS(on)) of the FDV305N at VGS = 4.5 V and ID = 0.9 A?

    The on-resistance (RDS(on)) is 220 mΩ at VGS = 4.5 V and ID = 0.9 A.

  7. What is the maximum power dissipation (PD) of the FDV305N?

    The maximum power dissipation (PD) is 0.35 W.

  8. What is the operating and storage junction temperature range (TJ, TSTG) of the FDV305N?

    The operating and storage junction temperature range is from -55°C to 150°C.

  9. Is the FDV305N suitable for high-frequency switching applications?

    Yes, the FDV305N has fast switching speeds, making it suitable for high-frequency switching applications.

  10. What package type is the FDV305N available in?

    The FDV305N is available in a SOT-23 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:220mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:109 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number FDV305N FDV301N FDV303N
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 900mA (Ta) 220mA (Ta) 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.7V, 4.5V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 220mOhm @ 900mA, 4.5V 4Ohm @ 400mA, 4.5V 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.06V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4.5 V 0.7 nC @ 4.5 V 2.3 nC @ 4.5 V
Vgs (Max) ±12V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 109 pF @ 10 V 9.5 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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