Overview
The FDV301N is an N-Channel logic level enhancement mode field effect transistor produced by onsemi using their proprietary, high cell density, DMOS technology. This device is designed for low voltage applications and can replace multiple NPN digital transistors, eliminating the need for bias resistors. It is particularly suited for applications requiring low on-state resistance and very low level gate drive requirements, making it compatible with 3V circuits.
Key Specifications
| Parameter | Symbol | Unit | Max | Typ | Min |
|---|---|---|---|---|---|
| Drain-Source Voltage, Power Supply Voltage | VDSS, VCC | V | 25 | ||
| Gate-Source Voltage, Input Voltage | VGSS, VIN | V | 8 | ||
| Drain/Output Current - Continuous | ID, IO | A | 0.22 | ||
| Drain/Output Current - Peak | A | 0.5 | |||
| Maximum Power Dissipation | PD | W | 0.35 | ||
| Operating and Storage Temperature Range | TJ, TSTG | °C | -55 to 150 | ||
| On-State Resistance at VGS = 2.7 V | RDS(on) | Ω | 5 | ||
| On-State Resistance at VGS = 4.5 V | RDS(on) | Ω | 4 | ||
| Threshold Voltage | VGS(th) | V | < 1.06 | ||
| Electrostatic Discharge Rating (Human Body Model) | ESD | kV | > 6 |
Key Features
- Produced using onsemi’s proprietary, high cell density, DMOS technology to minimize on-state resistance.
- Very low level gate drive requirements, allowing direct operation in 3V circuits.
- Gate-Source Zener for ESD ruggedness, with an ESD rating of > 6 kV Human Body Model.
- Can replace multiple NPN digital transistors with one DMOS FET, eliminating the need for bias resistors.
- Pb-free and halide-free.
Applications
The FDV301N is suitable for a wide range of applications, particularly those requiring low voltage and low on-state resistance. It is ideal for replacing digital transistors in various circuits and can be used in general-purpose switching applications, logic circuits, and other low-power electronic devices.
Q & A
- What is the maximum drain-source voltage of the FDV301N?
The maximum drain-source voltage is 25 V. - What is the continuous drain current rating of the FDV301N?
The continuous drain current rating is 0.22 A. - What is the peak drain current rating of the FDV301N?
The peak drain current rating is 0.5 A. - What is the on-state resistance of the FDV301N at VGS = 2.7 V?
The on-state resistance is 5 Ω at VGS = 2.7 V. - What is the on-state resistance of the FDV301N at VGS = 4.5 V?
The on-state resistance is 4 Ω at VGS = 4.5 V. - What is the threshold voltage of the FDV301N?
The threshold voltage is less than 1.06 V. - Is the FDV301N ESD rugged?
Yes, it has a Gate-Source Zener for ESD ruggedness with an ESD rating of > 6 kV Human Body Model. - Can the FDV301N replace multiple NPN digital transistors?
Yes, it can replace multiple NPN digital transistors with one DMOS FET, eliminating the need for bias resistors. - Is the FDV301N Pb-free and halide-free?
Yes, the FDV301N is Pb-free and halide-free. - What is the operating temperature range of the FDV301N?
The operating and storage temperature range is -55 to 150 °C.
