FDS86106
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onsemi FDS86106

Manufacturer No:
FDS86106
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 3.4A 8SOIC
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FDS86106 is an N-Channel MOSFET produced by onsemi, utilizing their advanced Power Trench® process. This technology has been optimized for low on-resistance (rDS(on)), enhanced switching performance, and increased ruggedness. Although the product is currently obsolete and not in production, it remains a reference point for its advanced features and specifications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100V
Current Rating (Id)3.4A
On-Resistance (rDS(on))105mΩ @ 10V, 3.4A
Package TypeSO-8
Power Dissipation (Pd)5W
Threshold Voltage (Vth)4V @ 250μA

Key Features

  • Advanced Power Trench® process for low rDS(on) and high efficiency.
  • Thermally efficient SO-8 package.
  • Next-generation enhanced body diode technology for soft recovery.
  • Optimized for switching performance and ruggedness.

Applications

The FDS86106 MOSFET is suitable for various applications requiring high efficiency and robust performance, such as power supplies, DC-DC converters, motor control circuits, and other power management systems.

Q & A

  1. What is the voltage rating of the FDS86106 MOSFET?
    The voltage rating of the FDS86106 MOSFET is 100V.
  2. What is the current rating of the FDS86106 MOSFET?
    The current rating of the FDS86106 MOSFET is 3.4A.
  3. What is the on-resistance (rDS(on)) of the FDS86106 MOSFET?
    The on-resistance (rDS(on)) of the FDS86106 MOSFET is 105mΩ @ 10V, 3.4A.
  4. What package type does the FDS86106 MOSFET use?
    The FDS86106 MOSFET uses an SO-8 package.
  5. What is the power dissipation (Pd) of the FDS86106 MOSFET?
    The power dissipation (Pd) of the FDS86106 MOSFET is 5W.
  6. What is the threshold voltage (Vth) of the FDS86106 MOSFET?
    The threshold voltage (Vth) of the FDS86106 MOSFET is 4V @ 250μA.
  7. Is the FDS86106 MOSFET still in production?
    No, the FDS86106 MOSFET is currently obsolete and not in production.
  8. What technology is used in the FDS86106 MOSFET?
    The FDS86106 MOSFET uses onsemi's advanced Power Trench® process.
  9. What are some key features of the FDS86106 MOSFET?
    The key features include low rDS(on), thermally efficient package, and enhanced body diode technology for soft recovery.
  10. What are typical applications for the FDS86106 MOSFET?
    Typical applications include power supplies, DC-DC converters, motor control circuits, and other power management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:208 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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