FDS5680
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onsemi FDS5680

Manufacturer No:
FDS5680
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS5680 is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology is designed to minimize on-state resistance and maximize switching performance. Although the FDS5680 is currently listed as obsolete and no longer manufactured, it remains a notable component in the realm of discrete semiconductor products.

Key Specifications

Parameter Value
Channel Type N-Channel
Drain-Source Voltage (Vds) 60 V
Continuous Drain Current (Id) 8 A (at Ta)
On-State Resistance (Rds(on)) 20 mΩ @ 8 A, 10 V
Power Dissipation (Pd) 2.5 W (at Ta)
Threshold Voltage (Vth) 4 V @ 250 μA
Package Type 8-SOIC (Surface Mount)
RoHS Compliance Yes

Key Features

  • Advanced PowerTrench process for low on-state resistance and high switching performance.
  • High drain current capability of 8 A.
  • Low power dissipation of 2.5 W at ambient temperature.
  • Compact 8-SOIC surface mount package for efficient board space utilization.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Power management and switching circuits in various electronic devices.
  • Motor control and drive systems.
  • DC-DC converters and power supplies.
  • Automotive and industrial control systems.

Q & A

  1. What is the channel type of the FDS5680 MOSFET?

    The FDS5680 is an N-Channel MOSFET.

  2. What is the maximum drain-source voltage (Vds) of the FDS5680?

    The maximum drain-source voltage (Vds) is 60 V.

  3. What is the continuous drain current (Id) of the FDS5680?

    The continuous drain current (Id) is 8 A at ambient temperature.

  4. What is the on-state resistance (Rds(on)) of the FDS5680?

    The on-state resistance (Rds(on)) is 20 mΩ @ 8 A, 10 V.

  5. What is the power dissipation (Pd) of the FDS5680?

    The power dissipation (Pd) is 2.5 W at ambient temperature.

  6. What is the package type of the FDS5680?

    The package type is 8-SOIC (Surface Mount).

  7. Is the FDS5680 RoHS compliant?

    Yes, the FDS5680 is RoHS compliant.

  8. What is the current status of the FDS5680 in terms of production?

    The FDS5680 is currently listed as obsolete and is no longer manufactured.

  9. What are some common applications of the FDS5680?

    Common applications include power management, motor control, DC-DC converters, and automotive and industrial control systems.

  10. Where can I find detailed specifications for the FDS5680?

    Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like DigiKey and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDS5680 FDS6680 FDS5690 FDS5682 FDS3680 FDS5670
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 60 V 60 V 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 11.5A (Ta) 7A (Ta) 7.5A (Ta) 5.2A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V 6V, 10V 4.5V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 8A, 10V 10mOhm @ 11.5A, 10V 28mOhm @ 7A, 10V 21mOhm @ 7.5A, 10V 46mOhm @ 5.2A, 10V 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3V @ 250µA 4V @ 250µA 2V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 27 nC @ 5 V 32 nC @ 10 V 35 nC @ 10 V 53 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 15 V 2070 pF @ 15 V 1107 pF @ 30 V 1650 pF @ 25 V 1735 pF @ 50 V 2900 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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