Overview
The FDP18N50 is a high-voltage N-Channel MOSFET from onsemi, part of their UniFET MOSFET family. This device is built using planar stripe and DMOS technology, designed to minimize on-state resistance and enhance switching performance. It is particularly suited for high-efficiency switched mode power supplies and active power factor correction applications.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | - | - | 500 | V |
| Continuous Drain Current (TC = 25°C) | ID | - | - | 18 | A |
| Pulsed Drain Current | IDM | - | - | 72 | A |
| Gate to Source Voltage | VGSS | - | - | ±30 | V |
| Single Pulsed Avalanche Energy | EAS | - | - | 945 | mJ |
| Power Dissipation (TC = 25°C) | PD | - | - | 235 | W |
| Thermal Resistance, Junction to Case | RθJC | - | - | 0.53 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 62.5 | °C/W |
| Gate Threshold Voltage | VGS(th) | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | - | 0.220 | 0.265 | Ω |
| Total Gate Charge | Qg | - | 45 | 60 | nC |
Key Features
- Low on-state resistance (RDS(on) = 220 mΩ @ VGS = 10 V, ID = 9 A)
- Low gate charge (Typ. 45 nC)
- Low Crss (Typ. 25 pF)
- 100% avalanche tested
- Fast switching capabilities
- Improved dv/dt capability
- Pb-free and RoHS compliant
Applications
- LCD/LED/PDP TV power supplies
- Lighting systems
- Uninterruptible Power Supplies (UPS)
- Power factor correction (PFC) circuits
- Electronic lamp ballasts
- ATX power supplies
Q & A
- What is the maximum drain to source voltage of the FDP18N50 MOSFET? The maximum drain to source voltage is 500 V.
- What is the continuous drain current at 25°C? The continuous drain current at 25°C is 18 A.
- What is the typical on-state resistance? The typical on-state resistance is 220 mΩ @ VGS = 10 V, ID = 9 A.
- What is the total gate charge? The total gate charge is typically 45 nC.
- Is the FDP18N50 MOSFET Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
- What are some common applications of the FDP18N50 MOSFET? Common applications include LCD/LED/PDP TV power supplies, lighting systems, UPS, PFC circuits, electronic lamp ballasts, and ATX power supplies.
- What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 235 W.
- What is the thermal resistance from junction to case? The thermal resistance from junction to case is 0.53 °C/W.
- What is the gate threshold voltage range? The gate threshold voltage range is from 3.0 V to 5.0 V.
- What is the maximum single pulsed avalanche energy? The maximum single pulsed avalanche energy is 945 mJ.
