Overview
The FDN5630-G is an N-Channel MOSFET from onsemi, designed to enhance the efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. This device leverages onsemi’s POWERTRENCH technology, which offers faster switching times compared to other MOSFETs with similar RDS(on) specifications. The FDN5630-G is packaged in a small SOT23 footprint, making it ideal for applications where board space is limited.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | - | - | 60 | V |
| Gate-Source Voltage (VGSS) | - | - | ±20 | V |
| Continuous Drain Current (ID) | - | - | 1.7 | A |
| Pulsed Drain Current | - | - | 10 | A |
| Power Dissipation (PD) | - | - | 0.5 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 | - | 150 | °C |
| Thermal Resistance, Junction-to-Ambient (RJA) | - | - | 250 | °C/W |
| Thermal Resistance, Junction-to-Case (RJC) | - | - | 75 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = 10 V, ID = 1.7 A | 0.073 | - | 0.100 | Ω |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = 6 V, ID = 1.6 A | 0.083 | - | 0.120 | Ω |
Key Features
- Very low RDS(on) in a small SOT23 footprint
- Optimized for use in high-frequency DC-DC converters
- Low gate charge and very fast switching
- Pb-free and halogen-free
- High efficiency with less board space due to POWERTRENCH technology
Applications
- DC-DC converters
- Motor drives
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDN5630-G?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) rating of the FDN5630-G?
The continuous drain current (ID) rating is 1.7 A.
- What is the thermal resistance, junction-to-ambient (RJA), of the FDN5630-G?
The thermal resistance, junction-to-ambient (RJA), is 250 °C/W.
- What are the key features of the FDN5630-G?
The key features include very low RDS(on) in a small SOT23 footprint, optimization for high-frequency DC-DC converters, low gate charge, very fast switching, and being Pb-free and halogen-free.
- What applications is the FDN5630-G suitable for?
The FDN5630-G is suitable for DC-DC converters and motor drives.
- What is the gate-source voltage (VGSS) range for the FDN5630-G?
The gate-source voltage (VGSS) range is ±20 V.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 1.7 A?
The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 1.7 A is 0.100 Ω.
- Is the FDN5630-G Pb-free and halogen-free?
- What is the operating and storage junction temperature range for the FDN5630-G?
The operating and storage junction temperature range is -55 to +150 °C.
- What technology does the FDN5630-G use to enhance its performance?
The FDN5630-G uses onsemi’s POWERTRENCH technology to enhance its performance.
