Overview
The FDMT800120DC-22897 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process and DUAL COOL™ 88 package technology. This device is designed to offer low on-resistance (rDS(on)) and high efficiency, making it suitable for various high-performance applications. The MOSFET features a surface mount package and is Pb-free, halide-free, and RoHS compliant.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 120 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TA = 25°C | 20 | A |
| Continuous Drain Current (ID) at TC = 25°C | 128 | A |
| Power Dissipation at TA = 25°C | 3.2 | W |
| Power Dissipation at TC = 25°C | 156 | W |
| Operating and Storage Junction Temperature Range | −55 to +150 | °C |
| Thermal Resistance, Junction to Ambient (RθJA) | 38 (Note 1a) | °C/W |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 15 A | - | mΩ |
Key Features
- Advanced POWERTRENCH process for low rDS(on) and high efficiency
- DUAL COOL™ 88 package technology for enhanced thermal performance
- Next generation enhanced body diode technology for soft recovery
- Low profile 8x8 mm MLP package
- MSL1 robust package design
- 100% UIL tested
- Pb-free, halide-free, and RoHS compliant
Applications
- OringFET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMT800120DC-22897?
The maximum drain to source voltage (VDS) is 120 V.
- What is the continuous drain current (ID) at ambient temperature (TA = 25°C)?
The continuous drain current (ID) at TA = 25°C is 20 A.
- What is the thermal resistance, junction to ambient (RθJA), for this device?
The thermal resistance, junction to ambient (RθJA), is 38 °C/W under specified conditions.
- Is the FDMT800120DC-22897 Pb-free and RoHS compliant?
Yes, the device is Pb-free, halide-free, and RoHS compliant.
- What are the typical applications of the FDMT800120DC-22897?
Typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.
- What package type does the FDMT800120DC-22897 use?
The device uses an 8x8 mm MLP package with DUAL COOL™ 88 technology.
- What is the maximum power dissipation at case temperature (TC = 25°C)?
The maximum power dissipation at TC = 25°C is 156 W.
- What is the operating and storage junction temperature range for this MOSFET?
The operating and storage junction temperature range is −55 to +150 °C.
- Does the FDMT800120DC-22897 have enhanced body diode technology?
Yes, it features next generation enhanced body diode technology for soft recovery.
- Is the package design of the FDMT800120DC-22897 robust?
Yes, the package design is MSL1 robust.
