Overview
The FDMS86202ET120 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by ON Semiconductor. This device is designed using Fairchild Semiconductor’s advanced PowerTrench® process, which incorporates Shielded Gate technology. This technology optimizes the on-state resistance while maintaining superior switching performance. The MOSFET is known for its high efficiency, low on-state resistance, and robust package design, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|
| Drain to Source Voltage (VDS) | - | - | 120 | V |
| Gate to Source Voltage (VGS) | - | - | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | - | - | 102 | A |
| Continuous Drain Current (ID) at TC = 100 °C | - | - | 72 | A |
| Pulsed Drain Current (ID) | - | - | 538 | A |
| Single Pulse Avalanche Energy (EAS) | - | - | 600 | mJ |
| Power Dissipation at TC = 25 °C | - | - | 187 | W |
| Operating and Storage Junction Temperature Range | -55 | - | 175 | °C |
| Thermal Resistance, Junction to Case (RθJC) | - | - | 0.8 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | - | - | 45 | °C/W |
| Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 13.5 A | 6.0 | 7.2 | - | mΩ |
Key Features
- Extended junction temperature rating up to 175°C
- Shielded Gate MOSFET Technology for improved on-state resistance and switching performance
- Low on-state resistance: max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A
- Advanced package and silicon combination for high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Applications
The FDMS86202ET120 is suitable for various high-power applications, including:
- DC-DC Conversion
- Power Supplies
- Motor Control
- Industrial Power Systems
- Automotive Systems
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86202ET120?
The maximum drain to source voltage (VDS) is 120 V. - What is the continuous drain current (ID) at a case temperature of 25 °C?
The continuous drain current (ID) at TC = 25 °C is 102 A. - What is the thermal resistance from junction to case (RθJC) of the FDMS86202ET120?
The thermal resistance from junction to case (RθJC) is 0.8 °C/W. - What is the maximum power dissipation at a case temperature of 25 °C?
The maximum power dissipation at TC = 25 °C is 187 W. - Is the FDMS86202ET120 RoHS compliant?
Yes, the FDMS86202ET120 is RoHS compliant. - What is the maximum gate to source voltage (VGS) for the FDMS86202ET120?
The maximum gate to source voltage (VGS) is ±20 V. - What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 13.5 A?
The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 13.5 A is 7.2 mΩ. - What are the operating and storage junction temperature ranges for the FDMS86202ET120?
The operating and storage junction temperature range is -55 to +175 °C. - What is the single pulse avalanche energy (EAS) rating for the FDMS86202ET120?
The single pulse avalanche energy (EAS) rating is 600 mJ. - What type of technology is used in the FDMS86202ET120?
The FDMS86202ET120 uses Fairchild Semiconductor’s advanced PowerTrench® process with Shielded Gate technology.
