FDMC8882
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onsemi FDMC8882

Manufacturer No:
FDMC8882
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 10.5A/16A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8882 is an N-Channel Power Trench® MOSFET produced by onsemi. This device is fabricated using onsemi's advanced Power Trench® process, which is specifically designed to minimize on-state resistance. Although the product is currently obsolete and not in production, it remains a reference point for its performance characteristics and historical use in various applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
ID (Continuous Drain Current) 16 A
RDS(ON) (On-State Resistance) 14.3
VGS(TH) (Gate Threshold Voltage) 1.5 - 3.5 V
PD (Power Dissipation) - -

Key Features

  • Advanced Power Trench® process to minimize on-state resistance.
  • Low on-state resistance (RDS(ON)) of 14.3 mΩ.
  • High continuous drain current (ID) of 16 A.
  • Gate threshold voltage (VGS(TH)) range of 1.5 to 3.5 V.

Applications

The FDMC8882 N-Channel MOSFET is suitable for various power management and switching applications, including but not limited to:

  • DC-DC converters
  • Power supplies
  • Motor control and drive systems
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDMC8882?

    30 V.

  2. What is the continuous drain current (ID) of the FDMC8882?

    16 A.

  3. What is the on-state resistance (RDS(ON)) of the FDMC8882?

    14.3 mΩ.

  4. What is the gate threshold voltage (VGS(TH)) range of the FDMC8882?

    1.5 to 3.5 V.

  5. Is the FDMC8882 still in production?

    No, the FDMC8882 is obsolete and not in production.

  6. What process is used to fabricate the FDMC8882?

    The FDMC8882 is fabricated using onsemi's advanced Power Trench® process.

  7. What are some typical applications for the FDMC8882?

    DC-DC converters, power supplies, motor control and drive systems, and high-frequency switching circuits.

  8. Where can I find detailed specifications for the FDMC8882?

    Detailed specifications can be found in the datasheet available from sources like Mouser Electronics and onsemi's official website.

  9. Why is the on-state resistance important for the FDMC8882?

    The low on-state resistance minimizes power losses and improves efficiency in switching applications.

  10. What is the significance of the gate threshold voltage for the FDMC8882?

    The gate threshold voltage determines the minimum voltage required to turn the MOSFET on, which is crucial for proper operation in circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.3mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:945 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 18W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC8882 FDMC8884
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 16A (Tc) 9A (Ta), 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.3mOhm @ 10.5A, 10V 19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 945 pF @ 15 V 685 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 18W (Tc) 2.3W (Ta), 18W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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