FDMC8882
  • Share:

onsemi FDMC8882

Manufacturer No:
FDMC8882
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 10.5A/16A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8882 is an N-Channel Power Trench® MOSFET produced by onsemi. This device is fabricated using onsemi's advanced Power Trench® process, which is specifically designed to minimize on-state resistance. Although the product is currently obsolete and not in production, it remains a reference point for its performance characteristics and historical use in various applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
ID (Continuous Drain Current) 16 A
RDS(ON) (On-State Resistance) 14.3
VGS(TH) (Gate Threshold Voltage) 1.5 - 3.5 V
PD (Power Dissipation) - -

Key Features

  • Advanced Power Trench® process to minimize on-state resistance.
  • Low on-state resistance (RDS(ON)) of 14.3 mΩ.
  • High continuous drain current (ID) of 16 A.
  • Gate threshold voltage (VGS(TH)) range of 1.5 to 3.5 V.

Applications

The FDMC8882 N-Channel MOSFET is suitable for various power management and switching applications, including but not limited to:

  • DC-DC converters
  • Power supplies
  • Motor control and drive systems
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDMC8882?

    30 V.

  2. What is the continuous drain current (ID) of the FDMC8882?

    16 A.

  3. What is the on-state resistance (RDS(ON)) of the FDMC8882?

    14.3 mΩ.

  4. What is the gate threshold voltage (VGS(TH)) range of the FDMC8882?

    1.5 to 3.5 V.

  5. Is the FDMC8882 still in production?

    No, the FDMC8882 is obsolete and not in production.

  6. What process is used to fabricate the FDMC8882?

    The FDMC8882 is fabricated using onsemi's advanced Power Trench® process.

  7. What are some typical applications for the FDMC8882?

    DC-DC converters, power supplies, motor control and drive systems, and high-frequency switching circuits.

  8. Where can I find detailed specifications for the FDMC8882?

    Detailed specifications can be found in the datasheet available from sources like Mouser Electronics and onsemi's official website.

  9. Why is the on-state resistance important for the FDMC8882?

    The low on-state resistance minimizes power losses and improves efficiency in switching applications.

  10. What is the significance of the gate threshold voltage for the FDMC8882?

    The gate threshold voltage determines the minimum voltage required to turn the MOSFET on, which is crucial for proper operation in circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.3mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:945 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 18W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$0.94
242

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC8882 FDMC8884
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 16A (Tc) 9A (Ta), 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.3mOhm @ 10.5A, 10V 19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 945 pF @ 15 V 685 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 18W (Tc) 2.3W (Ta), 18W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC