Overview
The FDMC86570LET60 is a high-performance N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is fabricated using the advanced PowerTrench® process, which incorporates Shielded Gate technology to enhance its electrical characteristics and reliability. The MOSFET is designed for high-power applications requiring low on-resistance and high current handling capabilities.
Key Specifications
| Parameter | Ratings | Unit |
|---|---|---|
| VDS - Drain to Source Voltage | 60 | V |
| VGS - Gate to Source Voltage | ±20 | V |
| ID - Continuous Drain Current (TC = 25°C) | 56 A | A |
| ID - Continuous Drain Current (TA) | 18 A | A |
| ID - Continuous Drain Current (TC) | 87 A | A |
| PD - Power Dissipation (TA) | 2.8 W | W |
| PD - Power Dissipation (TC) | 65 W | W |
Key Features
- Advanced PowerTrench® Process: Utilizes Shielded Gate technology to improve electrical performance and reliability.
- High Current Handling: Capable of handling up to 56 A of continuous drain current at TC = 25°C.
- Low On-Resistance: Optimized for low RDS(ON) to minimize power losses.
- High Voltage Rating: Supports a drain to source voltage of up to 60 V.
- Surface Mount Package: Available in the Power33 package, suitable for surface mount applications.
Applications
- Power Supplies: Suitable for use in high-power DC-DC converters and power supplies.
- Motor Control: Ideal for motor drive applications requiring high current and low on-resistance.
- Industrial Automation: Used in various industrial automation systems where high reliability and performance are critical.
- Automotive Systems: Can be used in automotive applications such as battery management and power distribution.
Q & A
- What is the maximum drain to source voltage of the FDMC86570LET60 MOSFET?
The maximum drain to source voltage (VDS) is 60 V.
- What is the continuous drain current rating of the FDMC86570LET60 at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 56 A.
- What is the power dissipation rating of the FDMC86570LET60 at TA?
The power dissipation (PD) at TA is 2.8 W.
- What is the power dissipation rating of the FDMC86570LET60 at TC?
The power dissipation (PD) at TC is 65 W.
- What type of process is used to fabricate the FDMC86570LET60 MOSFET?
The FDMC86570LET60 is fabricated using the advanced PowerTrench® process with Shielded Gate technology.
- What is the package type of the FDMC86570LET60 MOSFET?
The FDMC86570LET60 is available in the Power33 surface mount package.
- What are some typical applications of the FDMC86570LET60 MOSFET?
Typical applications include power supplies, motor control, industrial automation, and automotive systems.
- What is the gate to source voltage rating of the FDMC86570LET60 MOSFET?
The gate to source voltage (VGS) rating is ±20 V.
- How much current can the FDMC86570LET60 handle at TA?
The FDMC86570LET60 can handle up to 18 A of continuous drain current at TA.
- How much current can the FDMC86570LET60 handle at TC?
The FDMC86570LET60 can handle up to 87 A of continuous drain current at TC.
