FDMC86570LET60
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onsemi FDMC86570LET60

Manufacturer No:
FDMC86570LET60
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 18A/87A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86570LET60 is a high-performance N-Channel MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is fabricated using the advanced PowerTrench® process, which incorporates Shielded Gate technology to enhance its electrical characteristics and reliability. The MOSFET is designed for high-power applications requiring low on-resistance and high current handling capabilities.

Key Specifications

Parameter Ratings Unit
VDS - Drain to Source Voltage 60 V
VGS - Gate to Source Voltage ±20 V
ID - Continuous Drain Current (TC = 25°C) 56 A A
ID - Continuous Drain Current (TA) 18 A A
ID - Continuous Drain Current (TC) 87 A A
PD - Power Dissipation (TA) 2.8 W W
PD - Power Dissipation (TC) 65 W W

Key Features

  • Advanced PowerTrench® Process: Utilizes Shielded Gate technology to improve electrical performance and reliability.
  • High Current Handling: Capable of handling up to 56 A of continuous drain current at TC = 25°C.
  • Low On-Resistance: Optimized for low RDS(ON) to minimize power losses.
  • High Voltage Rating: Supports a drain to source voltage of up to 60 V.
  • Surface Mount Package: Available in the Power33 package, suitable for surface mount applications.

Applications

  • Power Supplies: Suitable for use in high-power DC-DC converters and power supplies.
  • Motor Control: Ideal for motor drive applications requiring high current and low on-resistance.
  • Industrial Automation: Used in various industrial automation systems where high reliability and performance are critical.
  • Automotive Systems: Can be used in automotive applications such as battery management and power distribution.

Q & A

  1. What is the maximum drain to source voltage of the FDMC86570LET60 MOSFET?

    The maximum drain to source voltage (VDS) is 60 V.

  2. What is the continuous drain current rating of the FDMC86570LET60 at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 56 A.

  3. What is the power dissipation rating of the FDMC86570LET60 at TA?

    The power dissipation (PD) at TA is 2.8 W.

  4. What is the power dissipation rating of the FDMC86570LET60 at TC?

    The power dissipation (PD) at TC is 65 W.

  5. What type of process is used to fabricate the FDMC86570LET60 MOSFET?

    The FDMC86570LET60 is fabricated using the advanced PowerTrench® process with Shielded Gate technology.

  6. What is the package type of the FDMC86570LET60 MOSFET?

    The FDMC86570LET60 is available in the Power33 surface mount package.

  7. What are some typical applications of the FDMC86570LET60 MOSFET?

    Typical applications include power supplies, motor control, industrial automation, and automotive systems.

  8. What is the gate to source voltage rating of the FDMC86570LET60 MOSFET?

    The gate to source voltage (VGS) rating is ±20 V.

  9. How much current can the FDMC86570LET60 handle at TA?

    The FDMC86570LET60 can handle up to 18 A of continuous drain current at TA.

  10. How much current can the FDMC86570LET60 handle at TC?

    The FDMC86570LET60 can handle up to 87 A of continuous drain current at TC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4790 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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