FDMC86340ET80
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onsemi FDMC86340ET80

Manufacturer No:
FDMC86340ET80
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 14A/68A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86340ET80 is a high-performance N-Channel Shielded Gate Power Trench® MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in a variety of power management applications. With its robust construction and advanced Power Trench technology, the FDMC86340ET80 is well-suited for demanding environments requiring high current handling and low on-resistance.

Key Specifications

ParameterRatingsUnit
Drain to Source Voltage (VDS)80V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C68A
On-Resistance (RDS(on))6.5
Package TypePOWER33, PQFN, POWERCLIP SINGLE, JEDEC MO-240
Package Size3.3 x 3.3 mm

Key Features

  • High current handling capability of up to 68A at TC = 25°C
  • Low on-resistance of 6.5 mΩ
  • Shielded Gate technology for improved reliability and reduced gate capacitance
  • Compact POWER33 package with a small footprint of 3.3 x 3.3 mm
  • High voltage rating of 80V, suitable for various power management applications

Applications

The FDMC86340ET80 is suitable for a wide range of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems requiring high reliability and efficiency
  • Industrial power management and control systems
  • Consumer electronics requiring high current handling and low power loss

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC86340ET80?
    The maximum drain to source voltage (VDS) is 80V.
  2. What is the continuous drain current (ID) rating at TC = 25°C?
    The continuous drain current (ID) rating at TC = 25°C is 68A.
  3. What is the on-resistance (RDS(on)) of the FDMC86340ET80?
    The on-resistance (RDS(on)) is 6.5 mΩ.
  4. What package type is the FDMC86340ET80 available in?
    The FDMC86340ET80 is available in the POWER33, PQFN, POWERCLIP SINGLE, and JEDEC MO-240 packages.
  5. What are the dimensions of the POWER33 package?
    The dimensions of the POWER33 package are 3.3 x 3.3 mm.
  6. What is the gate to source voltage (VGS) rating?
    The gate to source voltage (VGS) rating is ±20V.
  7. What technology is used in the FDMC86340ET80?
    The FDMC86340ET80 uses Power Trench technology.
  8. Is the FDMC86340ET80 suitable for automotive applications?
    Yes, the FDMC86340ET80 is suitable for automotive systems due to its high reliability and efficiency.
  9. What are some common applications of the FDMC86340ET80?
    Common applications include power supplies, DC-DC converters, motor control systems, and industrial power management.
  10. Where can I find detailed specifications for the FDMC86340ET80?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2775 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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