FDMC86340ET80
  • Share:

onsemi FDMC86340ET80

Manufacturer No:
FDMC86340ET80
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 14A/68A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86340ET80 is a high-performance N-Channel Shielded Gate Power Trench® MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in a variety of power management applications. With its robust construction and advanced Power Trench technology, the FDMC86340ET80 is well-suited for demanding environments requiring high current handling and low on-resistance.

Key Specifications

ParameterRatingsUnit
Drain to Source Voltage (VDS)80V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C68A
On-Resistance (RDS(on))6.5
Package TypePOWER33, PQFN, POWERCLIP SINGLE, JEDEC MO-240
Package Size3.3 x 3.3 mm

Key Features

  • High current handling capability of up to 68A at TC = 25°C
  • Low on-resistance of 6.5 mΩ
  • Shielded Gate technology for improved reliability and reduced gate capacitance
  • Compact POWER33 package with a small footprint of 3.3 x 3.3 mm
  • High voltage rating of 80V, suitable for various power management applications

Applications

The FDMC86340ET80 is suitable for a wide range of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems requiring high reliability and efficiency
  • Industrial power management and control systems
  • Consumer electronics requiring high current handling and low power loss

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC86340ET80?
    The maximum drain to source voltage (VDS) is 80V.
  2. What is the continuous drain current (ID) rating at TC = 25°C?
    The continuous drain current (ID) rating at TC = 25°C is 68A.
  3. What is the on-resistance (RDS(on)) of the FDMC86340ET80?
    The on-resistance (RDS(on)) is 6.5 mΩ.
  4. What package type is the FDMC86340ET80 available in?
    The FDMC86340ET80 is available in the POWER33, PQFN, POWERCLIP SINGLE, and JEDEC MO-240 packages.
  5. What are the dimensions of the POWER33 package?
    The dimensions of the POWER33 package are 3.3 x 3.3 mm.
  6. What is the gate to source voltage (VGS) rating?
    The gate to source voltage (VGS) rating is ±20V.
  7. What technology is used in the FDMC86340ET80?
    The FDMC86340ET80 uses Power Trench technology.
  8. Is the FDMC86340ET80 suitable for automotive applications?
    Yes, the FDMC86340ET80 is suitable for automotive systems due to its high reliability and efficiency.
  9. What are some common applications of the FDMC86340ET80?
    Common applications include power supplies, DC-DC converters, motor control systems, and industrial power management.
  10. Where can I find detailed specifications for the FDMC86340ET80?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2775 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$2.30
200

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD