FDMC86262P
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onsemi FDMC86262P

Manufacturer No:
FDMC86262P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 2A/8.4A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDMC86262P is a P-Channel PowerTrench® MOSFET produced by onsemi. This device utilizes advanced PowerTrench technology, which is a very high density process designed to minimize on-state resistance and maximize switching performance. The FDMC86262P is packaged in an 8-pin MLP (Micro Leadframe Package) with dimensions of 3.3 x 3.3 mm, making it suitable for space-constrained applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)10 A
RDS(ON) (On-State Resistance)Typically 10 mΩ at VGS = -10 V
QG (Total Gate Charge)Typically 15 nC at VDS = 10 V
TJ (Junction Temperature)-55°C to 150°C
Package8-Pin MLP (3.3 x 3.3 mm)

Key Features

  • Advanced PowerTrench technology for low on-state resistance and high switching performance.
  • Compact 8-pin MLP package for space-saving designs.
  • High continuous drain current of 10 A.
  • Low total gate charge for efficient switching.
  • Wide operating junction temperature range from -55°C to 150°C.

Applications

The FDMC86262P is suitable for a variety of applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power management in consumer electronics and industrial equipment.
  • Battery management systems.

Q & A

  1. What is the maximum drain-source voltage of the FDMC86262P?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the typical on-state resistance of the FDMC86262P?
    The typical on-state resistance (RDS(ON)) is 10 mΩ at VGS = -10 V.
  3. What is the package type and dimensions of the FDMC86262P?
    The FDMC86262P is packaged in an 8-pin MLP with dimensions of 3.3 x 3.3 mm.
  4. What is the continuous drain current rating of the FDMC86262P?
    The continuous drain current (ID) is 10 A.
  5. What is the operating junction temperature range of the FDMC86262P?
    The operating junction temperature range is from -55°C to 150°C.
  6. What technology is used in the FDMC86262P?
    The FDMC86262P uses advanced PowerTrench technology.
  7. What are some typical applications of the FDMC86262P?
    Typical applications include DC-DC converters, motor control systems, power management in consumer electronics, and battery management systems.
  8. What is the total gate charge of the FDMC86262P?
    The total gate charge (QG) is typically 15 nC at VDS = 10 V.
  9. What is the maximum gate-source voltage of the FDMC86262P?
    The maximum gate-source voltage (VGS) is ±12 V.
  10. Why is the FDMC86262P suitable for space-constrained designs?
    The FDMC86262P is suitable for space-constrained designs due to its compact 8-pin MLP package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta), 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:307mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:885 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC86262P FDMC86265P FDMC86261P
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta), 8.4A (Tc) 1A (Ta), 1.8A (Tc) 2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 307mOhm @ 2A, 10V 1.2Ohm @ 1A, 10V 160mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 4 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 885 pF @ 75 V 210 pF @ 75 V 1360 pF @ 75 V
FET Feature - - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 16W (Tc) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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