FDMC86261P
  • Share:

onsemi FDMC86261P

Manufacturer No:
FDMC86261P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 2.7A/9A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86261P is a P-Channel PowerTrench MOSFET produced by onsemi, utilizing advanced PowerTrench technology. This technology is designed to minimize on-state resistance, enhancing the overall efficiency and performance of the device. The FDMC86261P is part of onsemi's low to medium voltage MOSFET family, making it suitable for a variety of power management and motor driver applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-150 V
ID (Continuous Drain Current)-9 A
RDS(ON) (On-Resistance)160 mΩ (typical at VGS = -10 V)
VGS(th) (Threshold Voltage)-2 to -4 V
Qg (Total Gate Charge)24 nC (typical)
PD (Power Dissipation)Dependent on package and thermal conditions

Key Features

  • Advanced PowerTrench technology for low on-state resistance
  • High density process for improved performance
  • Standard 40V gate level for compatibility with various driver circuits
  • Low thermal resistance package for efficient heat dissipation
  • Suitable for motor driver applications due to its high current handling capability

Applications

  • Motor drivers and control systems
  • Power management in automotive and industrial systems
  • DC-DC converters and power supplies
  • High-current switching applications

Q & A

  1. What is the maximum drain-source voltage of the FDMC86261P?
    The maximum drain-source voltage (VDS) is -150 V.
  2. What is the continuous drain current rating of the FDMC86261P?
    The continuous drain current (ID) is -9 A.
  3. What is the typical on-resistance of the FDMC86261P?
    The typical on-resistance (RDS(ON)) is 160 mΩ at VGS = -10 V.
  4. What is the threshold voltage range of the FDMC86261P?
    The threshold voltage (VGS(th)) range is -2 to -4 V.
  5. What is the total gate charge of the FDMC86261P?
    The total gate charge (Qg) is typically 24 nC.
  6. What are some common applications of the FDMC86261P?
    Common applications include motor drivers, power management in automotive and industrial systems, DC-DC converters, and high-current switching applications.
  7. What technology is used in the FDMC86261P?
    The FDMC86261P uses advanced PowerTrench technology.
  8. What is the gate level of the FDMC86261P?
    The gate level is standard 40V.
  9. How does the PowerTrench technology benefit the FDMC86261P?
    The PowerTrench technology minimizes on-state resistance, enhancing efficiency and performance.
  10. What package types are available for the FDMC86261P?
    The specific package types can be found in the datasheet or on the manufacturer's website.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.90
340

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC86261P FDMC86262P FDMC86265P
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 9A (Tc) 2A (Ta), 8.4A (Tc) 1A (Ta), 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 2.4A, 10V 307mOhm @ 2A, 10V 1.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 13 nC @ 10 V 4 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 75 V 885 pF @ 75 V 210 pF @ 75 V
FET Feature - - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 16W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223