FDMC86261P
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onsemi FDMC86261P

Manufacturer No:
FDMC86261P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 2.7A/9A 8MLP
Delivery:
Payment:
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Product Introduction

Overview

The FDMC86261P is a P-Channel PowerTrench MOSFET produced by onsemi, utilizing advanced PowerTrench technology. This technology is designed to minimize on-state resistance, enhancing the overall efficiency and performance of the device. The FDMC86261P is part of onsemi's low to medium voltage MOSFET family, making it suitable for a variety of power management and motor driver applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-150 V
ID (Continuous Drain Current)-9 A
RDS(ON) (On-Resistance)160 mΩ (typical at VGS = -10 V)
VGS(th) (Threshold Voltage)-2 to -4 V
Qg (Total Gate Charge)24 nC (typical)
PD (Power Dissipation)Dependent on package and thermal conditions

Key Features

  • Advanced PowerTrench technology for low on-state resistance
  • High density process for improved performance
  • Standard 40V gate level for compatibility with various driver circuits
  • Low thermal resistance package for efficient heat dissipation
  • Suitable for motor driver applications due to its high current handling capability

Applications

  • Motor drivers and control systems
  • Power management in automotive and industrial systems
  • DC-DC converters and power supplies
  • High-current switching applications

Q & A

  1. What is the maximum drain-source voltage of the FDMC86261P?
    The maximum drain-source voltage (VDS) is -150 V.
  2. What is the continuous drain current rating of the FDMC86261P?
    The continuous drain current (ID) is -9 A.
  3. What is the typical on-resistance of the FDMC86261P?
    The typical on-resistance (RDS(ON)) is 160 mΩ at VGS = -10 V.
  4. What is the threshold voltage range of the FDMC86261P?
    The threshold voltage (VGS(th)) range is -2 to -4 V.
  5. What is the total gate charge of the FDMC86261P?
    The total gate charge (Qg) is typically 24 nC.
  6. What are some common applications of the FDMC86261P?
    Common applications include motor drivers, power management in automotive and industrial systems, DC-DC converters, and high-current switching applications.
  7. What technology is used in the FDMC86261P?
    The FDMC86261P uses advanced PowerTrench technology.
  8. What is the gate level of the FDMC86261P?
    The gate level is standard 40V.
  9. How does the PowerTrench technology benefit the FDMC86261P?
    The PowerTrench technology minimizes on-state resistance, enhancing efficiency and performance.
  10. What package types are available for the FDMC86261P?
    The specific package types can be found in the datasheet or on the manufacturer's website.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC86261P FDMC86262P FDMC86265P
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 9A (Tc) 2A (Ta), 8.4A (Tc) 1A (Ta), 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 2.4A, 10V 307mOhm @ 2A, 10V 1.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 13 nC @ 10 V 4 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 75 V 885 pF @ 75 V 210 pF @ 75 V
FET Feature - - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 16W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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