FDMC6688P
  • Share:

onsemi FDMC6688P

Manufacturer No:
FDMC6688P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 14A/56A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC6688P is a high-performance P-Channel MOSFET from onsemi, designed for high-performance applications in the electronics industry. This device utilizes onsemi's advanced PowerTrench® technology, which enhances its performance and reliability. Although the FDMC6688P is now considered obsolete, it remains a viable option for applications requiring high voltage and current management due to its robust specifications and surface mount packaging.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)20V
Continuous Drain Current (Id) at 25°C14A
Continuous Drain Current (Id) at Tc56A
On-Resistance (Rds On) at 14A and 4.5V6.5mOhm
Maximum Power Dissipation at Ta2.3W
Maximum Power Dissipation at Tc30W
Gate to Source Voltage (Vgs) Max±8V
Package Type8-pin PQFN
Mounting TypeSurface Mount

Key Features

  • Advanced PowerTrench® technology for improved performance and reliability.
  • Low on-resistance (Rds On) of 6.5mOhm at 14A and 4.5V, ensuring efficient power dissipation.
  • High continuous drain current handling of 14A at 25°C and 56A at Tc.
  • Surface mount packaging in an 8-pin PQFN package.
  • High voltage handling capability with a drain to source voltage (Vdss) of 20V.

Applications

The FDMC6688P is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

  • Power management systems.
  • Motor control applications.
  • Automotive electronics.

Q & A

  1. What is the FDMC6688P?
    The FDMC6688P is a high-performance P-Channel MOSFET from onsemi.
  2. What is the drain to source voltage (Vdss) of the FDMC6688P?
    The drain to source voltage (Vdss) is 20V.
  3. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 14A.
  4. What is the on-resistance (Rds On) at 14A and 4.5V?
    The on-resistance (Rds On) at 14A and 4.5V is 6.5mOhm.
  5. What is the maximum power dissipation at Ta?
    The maximum power dissipation at Ta is 2.3W.
  6. What is the package type of the FDMC6688P?
    The package type is an 8-pin PQFN.
  7. Is the FDMC6688P suitable for surface mount applications?
    Yes, the FDMC6688P is suitable for surface mount applications.
  8. What technology is used in the FDMC6688P?
    The FDMC6688P uses onsemi's advanced PowerTrench® technology.
  9. What are some common applications of the FDMC6688P?
    Common applications include power management, motor control, and automotive electronics.
  10. Is the FDMC6688P still in production?
    No, the FDMC6688P is now considered obsolete.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:7435 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3), Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

-
357

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC6688P FDMC6686P
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 56A (Tc) 18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 14A, 4.5V 4mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 4.5 V 122 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 7435 pF @ 10 V 13200 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 30W (Tc) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (3.3x3.3), Power33 8-PQFN (3.3x3.3), Power33
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP