FDMC6686P
  • Share:

onsemi FDMC6686P

Manufacturer No:
FDMC6686P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 18A/56A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC6686P is a P-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® process. This technology optimizes the device for low on-resistance (rDS(ON)), enhanced switching performance, and increased ruggedness. The MOSFET is designed for high-performance applications requiring efficient power management and reliability.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)-20V
Drain Current (Id)-56A
Pulsed Drain Current-377A
On-Resistance (rDS(ON))4mΩ @ 4.5V
Gate-Source Voltage (Vgs)±8V
Package TypePQFN-8 (3.3x3.3mm)
Power Dissipation40W

Key Features

  • Advanced PowerTrench® process for low rDS(ON) and enhanced switching performance
  • High current capability with a maximum drain current of -56A
  • Low on-resistance of 4mΩ @ 4.5V
  • Rugged design for reliability in demanding applications
  • Surface mount package (PQFN-8) for compact and efficient board design

Applications

The FDMC6686P P-Channel MOSFET is suitable for a variety of high-performance applications, including but not limited to:

  • Power management in consumer electronics
  • Automotive systems requiring high current and low on-resistance
  • Industrial power supplies and motor control systems
  • High-efficiency DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the FDMC6686P?
    The maximum drain-source voltage (Vds) is -20V.
  2. What is the maximum drain current of the FDMC6686P?
    The maximum drain current (Id) is -56A.
  3. What is the on-resistance (rDS(ON)) of the FDMC6686P?
    The on-resistance (rDS(ON)) is 4mΩ @ 4.5V.
  4. What is the package type of the FDMC6686P?
    The package type is PQFN-8 (3.3x3.3mm).
  5. What is the maximum power dissipation of the FDMC6686P?
    The maximum power dissipation is 40W.
  6. What technology is used in the FDMC6686P?
    The FDMC6686P uses the advanced PowerTrench® process.
  7. What is the gate-source voltage range of the FDMC6686P?
    The gate-source voltage (Vgs) range is ±8V.
  8. Is the FDMC6686P suitable for automotive applications?
    Yes, it is suitable for automotive systems requiring high current and low on-resistance.
  9. Can the FDMC6686P be used in high-efficiency DC-DC converters?
    Yes, it is suitable for high-efficiency DC-DC converters due to its low on-resistance and high current capability.
  10. Is the FDMC6686P a surface mount device?
    Yes, the FDMC6686P is a surface mount device.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:4mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:13200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3), Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

-
96

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC6686P FDMC6688P
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 56A (Tc) 14A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4mOhm @ 18A, 4.5V 6.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 4.5 V 61 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 10 V 7435 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (3.3x3.3), Power33 8-PQFN (3.3x3.3), Power33
Package / Case 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD