Overview
The FDMC5614P-B8 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is part of onsemi’s advanced PowerTrench process and is optimized for power management applications that require a wide range of gate drive voltage ratings (4.5V to 20V). It is designed to provide high performance, low on-resistance, and fast switching speeds, making it suitable for various power management needs.
Key Specifications
| Parameter | Rating/Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | -60 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | -13.5 | A |
| On-Resistance (rDS(on)) at VGS = -10 V, ID = -5.7 A | 100 | mΩ |
| On-Resistance (rDS(on)) at VGS = -4.5 V, ID = -4.4 A | 135 | mΩ |
| Gate Charge (Qg) at VGS = 4.5 V | 37 | nC |
| Gate Charge (Qg) at VGS = 10 V | 60 | nC |
| Input Capacitance (Ciss) | 795 | pF |
| Output Capacitance (Coss) | 29 | pF |
| Reverse Recovery Charge (Qrr) | 140 | nC |
Key Features
- High performance trench technology for extremely low on-resistance (rDS(on))
- Low gate charge and fast switching speed
- High power and current handling capability
- Rugged gate design for reliability
- Pb-free and RoHS compliant
Applications
- Power management
- Load switching
- Battery protection
- General power management applications requiring a wide range of gate drive voltage ratings
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC5614P-B8 MOSFET?
The maximum drain to source voltage (VDS) is -60 V.
- What is the maximum gate to source voltage (VGS) of the FDMC5614P-B8 MOSFET?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the continuous drain current (ID) rating of the FDMC5614P-B8 MOSFET?
The continuous drain current (ID) rating is -13.5 A.
- What is the on-resistance (rDS(on)) of the FDMC5614P-B8 MOSFET at VGS = -10 V and ID = -5.7 A?
The on-resistance (rDS(on)) is 100 mΩ.
- Is the FDMC5614P-B8 MOSFET RoHS compliant?
- What are the typical applications of the FDMC5614P-B8 MOSFET?
The typical applications include power management, load switching, and battery protection.
- What is the gate charge (Qg) of the FDMC5614P-B8 MOSFET at VGS = 4.5 V?
The gate charge (Qg) is 37 nC.
- What is the input capacitance (Ciss) of the FDMC5614P-B8 MOSFET?
The input capacitance (Ciss) is 795 pF.
- Is the FDMC5614P-B8 MOSFET Pb-free?
- What is the maximum operating temperature for the FDMC5614P-B8 MOSFET?
The maximum operating temperature is not explicitly stated, but it is typically within the range suitable for most power management applications.
