FDMC510P-F106
  • Share:

onsemi FDMC510P-F106

Manufacturer No:
FDMC510P-F106
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 12A/18A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC510P-F106 is a P-Channel Power MOSFET produced by onsemi, part of their POWERTRENCH® family. This device is designed for low to medium voltage applications and is known for its high performance and reliability. Although it is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)20 V
Continuous Drain Current (Id)18 A
Drain-Source Resistance (Rds On) @ 4.5V6.4 mΩ (typical), 8 mΩ (maximum)
Pulse Drain Current (Idm)-50 A
Power Dissipation (Pd)41 W
Package TypeMLP8 (3.3x3.3 mm)

Key Features

  • Low on-resistance (Rds On) of 6.4 mΩ (typical) at Vgs = 4.5V, ensuring minimal power loss.
  • High continuous drain current of 18 A and pulse drain current of -50 A.
  • Compact MLP8 package (3.3x3.3 mm) for space-efficient designs.
  • High power dissipation capability of 41 W.
  • Suitable for battery management and load switch applications.

Applications

The FDMC510P-F106 is designed for various low to medium voltage applications, including:

  • Battery Management: Ideal for managing battery power in portable devices.
  • Load Switch: Used in load switching applications where high current and low resistance are required.
  • Cell Phones and Media Tablets: Suitable for power management in mobile and tablet devices.

Q & A

  1. What is the drain-source breakdown voltage of the FDMC510P-F106?
    The drain-source breakdown voltage (Vds) is 20 V.
  2. What is the continuous drain current of the FDMC510P-F106?
    The continuous drain current (Id) is 18 A.
  3. What is the typical drain-source resistance of the FDMC510P-F106?
    The typical drain-source resistance (Rds On) at Vgs = 4.5V is 6.4 mΩ.
  4. What is the pulse drain current of the FDMC510P-F106?
    The pulse drain current (Idm) is -50 A.
  5. What is the power dissipation capability of the FDMC510P-F106?
    The power dissipation capability is 41 W.
  6. What package type does the FDMC510P-F106 use?
    The FDMC510P-F106 uses an MLP8 package (3.3x3.3 mm).
  7. Is the FDMC510P-F106 still in production?
    No, the FDMC510P-F106 is listed as obsolete and no longer manufactured.
  8. What are some common applications of the FDMC510P-F106?
    Common applications include battery management, load switching, and power management in cell phones and media tablets.
  9. What family of MOSFETs does the FDMC510P-F106 belong to?
    The FDMC510P-F106 belongs to the POWERTRENCH® family of MOSFETs.
  10. Where can I find detailed specifications for the FDMC510P-F106?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:7860 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

-
76

Please send RFQ , we will respond immediately.

Related Product By Categories

FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220