FDMC510P-F106
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onsemi FDMC510P-F106

Manufacturer No:
FDMC510P-F106
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 12A/18A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC510P-F106 is a P-Channel Power MOSFET produced by onsemi, part of their POWERTRENCH® family. This device is designed for low to medium voltage applications and is known for its high performance and reliability. Although it is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)20 V
Continuous Drain Current (Id)18 A
Drain-Source Resistance (Rds On) @ 4.5V6.4 mΩ (typical), 8 mΩ (maximum)
Pulse Drain Current (Idm)-50 A
Power Dissipation (Pd)41 W
Package TypeMLP8 (3.3x3.3 mm)

Key Features

  • Low on-resistance (Rds On) of 6.4 mΩ (typical) at Vgs = 4.5V, ensuring minimal power loss.
  • High continuous drain current of 18 A and pulse drain current of -50 A.
  • Compact MLP8 package (3.3x3.3 mm) for space-efficient designs.
  • High power dissipation capability of 41 W.
  • Suitable for battery management and load switch applications.

Applications

The FDMC510P-F106 is designed for various low to medium voltage applications, including:

  • Battery Management: Ideal for managing battery power in portable devices.
  • Load Switch: Used in load switching applications where high current and low resistance are required.
  • Cell Phones and Media Tablets: Suitable for power management in mobile and tablet devices.

Q & A

  1. What is the drain-source breakdown voltage of the FDMC510P-F106?
    The drain-source breakdown voltage (Vds) is 20 V.
  2. What is the continuous drain current of the FDMC510P-F106?
    The continuous drain current (Id) is 18 A.
  3. What is the typical drain-source resistance of the FDMC510P-F106?
    The typical drain-source resistance (Rds On) at Vgs = 4.5V is 6.4 mΩ.
  4. What is the pulse drain current of the FDMC510P-F106?
    The pulse drain current (Idm) is -50 A.
  5. What is the power dissipation capability of the FDMC510P-F106?
    The power dissipation capability is 41 W.
  6. What package type does the FDMC510P-F106 use?
    The FDMC510P-F106 uses an MLP8 package (3.3x3.3 mm).
  7. Is the FDMC510P-F106 still in production?
    No, the FDMC510P-F106 is listed as obsolete and no longer manufactured.
  8. What are some common applications of the FDMC510P-F106?
    Common applications include battery management, load switching, and power management in cell phones and media tablets.
  9. What family of MOSFETs does the FDMC510P-F106 belong to?
    The FDMC510P-F106 belongs to the POWERTRENCH® family of MOSFETs.
  10. Where can I find detailed specifications for the FDMC510P-F106?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:7860 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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