FDMC510P-F106
  • Share:

onsemi FDMC510P-F106

Manufacturer No:
FDMC510P-F106
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 12A/18A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC510P-F106 is a P-Channel Power MOSFET produced by onsemi, part of their POWERTRENCH® family. This device is designed for low to medium voltage applications and is known for its high performance and reliability. Although it is currently listed as obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)20 V
Continuous Drain Current (Id)18 A
Drain-Source Resistance (Rds On) @ 4.5V6.4 mΩ (typical), 8 mΩ (maximum)
Pulse Drain Current (Idm)-50 A
Power Dissipation (Pd)41 W
Package TypeMLP8 (3.3x3.3 mm)

Key Features

  • Low on-resistance (Rds On) of 6.4 mΩ (typical) at Vgs = 4.5V, ensuring minimal power loss.
  • High continuous drain current of 18 A and pulse drain current of -50 A.
  • Compact MLP8 package (3.3x3.3 mm) for space-efficient designs.
  • High power dissipation capability of 41 W.
  • Suitable for battery management and load switch applications.

Applications

The FDMC510P-F106 is designed for various low to medium voltage applications, including:

  • Battery Management: Ideal for managing battery power in portable devices.
  • Load Switch: Used in load switching applications where high current and low resistance are required.
  • Cell Phones and Media Tablets: Suitable for power management in mobile and tablet devices.

Q & A

  1. What is the drain-source breakdown voltage of the FDMC510P-F106?
    The drain-source breakdown voltage (Vds) is 20 V.
  2. What is the continuous drain current of the FDMC510P-F106?
    The continuous drain current (Id) is 18 A.
  3. What is the typical drain-source resistance of the FDMC510P-F106?
    The typical drain-source resistance (Rds On) at Vgs = 4.5V is 6.4 mΩ.
  4. What is the pulse drain current of the FDMC510P-F106?
    The pulse drain current (Idm) is -50 A.
  5. What is the power dissipation capability of the FDMC510P-F106?
    The power dissipation capability is 41 W.
  6. What package type does the FDMC510P-F106 use?
    The FDMC510P-F106 uses an MLP8 package (3.3x3.3 mm).
  7. Is the FDMC510P-F106 still in production?
    No, the FDMC510P-F106 is listed as obsolete and no longer manufactured.
  8. What are some common applications of the FDMC510P-F106?
    Common applications include battery management, load switching, and power management in cell phones and media tablets.
  9. What family of MOSFETs does the FDMC510P-F106 belong to?
    The FDMC510P-F106 belongs to the POWERTRENCH® family of MOSFETs.
  10. Where can I find detailed specifications for the FDMC510P-F106?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:7860 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

-
76

Please send RFQ , we will respond immediately.

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN