FDMC010N08C
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onsemi FDMC010N08C

Manufacturer No:
FDMC010N08C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 11A/51A POWER33
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The FDMC010N08C is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process with Shielded Gate technology. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Drain Source Voltage (Vds)80 V
Maximum Continuous Drain Current (Id)51 A
On-Resistance (Rds(on)) at Vgs = 10 V, Id = 16 A10 mΩ
On-Resistance (Rds(on)) at Vgs = 6 V, Id = 8 A25 mΩ
Package Type8-Pin Power33

Key Features

  • Advanced PowerTrench® process with Shielded Gate technology for improved performance and reliability.
  • Low on-resistance (Rds(on)) of 10 mΩ at Vgs = 10 V, Id = 16 A.
  • High current handling capability up to 51 A.
  • High voltage rating of 80 V.
  • 8-Pin Power33 package for efficient heat dissipation and compact design.

Applications

The FDMC010N08C is suitable for various power management applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power factor correction (PFC) circuits.
  • High-power switching applications.

Q & A

  1. What is the maximum drain source voltage of the FDMC010N08C?
    The maximum drain source voltage is 80 V.
  2. What is the maximum continuous drain current of the FDMC010N08C?
    The maximum continuous drain current is 51 A.
  3. What is the on-resistance (Rds(on)) at Vgs = 10 V and Id = 16 A?
    The on-resistance (Rds(on)) is 10 mΩ.
  4. What is the on-resistance (Rds(on)) at Vgs = 6 V and Id = 8 A?
    The on-resistance (Rds(on)) is 25 mΩ.
  5. What package type does the FDMC010N08C use?
    The FDMC010N08C uses an 8-Pin Power33 package.
  6. What technology is used in the FDMC010N08C?
    The FDMC010N08C uses onsemi's advanced PowerTrench® process with Shielded Gate technology.
  7. What are some common applications for the FDMC010N08C?
    Common applications include DC-DC converters, motor control systems, power factor correction circuits, and high-power switching applications.
  8. Where can I purchase the FDMC010N08C?
    The FDMC010N08C can be purchased from authorized distributors such as Digi-Key, Mouser, and RS Components.
  9. What is the significance of the Shielded Gate technology in the FDMC010N08C?
    The Shielded Gate technology enhances the device's performance and reliability by reducing gate charge and improving switching characteristics.
  10. Is the FDMC010N08C suitable for high-power applications?
    Yes, the FDMC010N08C is designed for high-power applications due to its high current and voltage ratings.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC010N08C FDMC010N08LC
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 51A (Tc) 11A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 16A, 10V 10.9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA 3V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 40 V 2135 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta), 52W (Tc) 2.3W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power33 8-PQFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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