FDMC007N08LCDC
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onsemi FDMC007N08LCDC

Manufacturer No:
FDMC007N08LCDC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 64A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC007N08LCDC is an N-Channel Shielded Gate POWERTRENCH MOSFET produced by onsemi. This device is designed to offer high performance and efficiency in various power management applications. It features advanced shielded gate technology, which enhances its switching characteristics and reduces gate charge. The MOSFET is capable of handling high current and voltage, making it suitable for demanding power electronics applications.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 22 A
Max RDS(on) at VGS = 10 V, ID = 22 A 6.8 mΩ
Max RDS(on) at VGS = 4.5 V, ID = 18 A 11.1 mΩ
Package Type 8-Pin PQFN8

Key Features

  • Shielded Gate Technology: Enhances switching characteristics and reduces gate charge.
  • Low On-Resistance (RDS(on)): 6.8 mΩ at VGS = 10 V, ID = 22 A and 11.1 mΩ at VGS = 4.5 V, ID = 18 A.
  • 5 V Drive Capability: Suitable for a wide range of applications requiring low gate drive voltage.
  • High Current Handling: Continuous drain current of 22 A.
  • Compact Package: 8-Pin PQFN8 package for space-efficient designs.

Applications

  • Power Management Systems: DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: Motor drives, servo motors, and other motor control applications.
  • Automotive Systems: Battery management, power steering, and other automotive power electronics.
  • Industrial Power Systems: Power inverters, UPS systems, and industrial power supplies.

Q & A

  1. What is the maximum drain-source breakdown voltage of the FDMC007N08LCDC?

    The maximum drain-source breakdown voltage is 80 V.

  2. What is the continuous drain current rating of the FDMC007N08LCDC?

    The continuous drain current rating is 22 A.

  3. What is the typical on-resistance (RDS(on)) of the FDMC007N08LCDC at VGS = 10 V?

    The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 22 A is 6.8 mΩ.

  4. Is the FDMC007N08LCDC 5 V drive capable?

    Yes, the FDMC007N08LCDC is 5 V drive capable.

  5. What package type does the FDMC007N08LCDC come in?

    The FDMC007N08LCDC comes in an 8-Pin PQFN8 package.

  6. What technology does the FDMC007N08LCDC use?

    The FDMC007N08LCDC uses Shielded Gate POWERTRENCH technology.

  7. What are some common applications for the FDMC007N08LCDC?

    Common applications include power management systems, motor control, automotive systems, and industrial power systems.

  8. Who is the manufacturer of the FDMC007N08LCDC?

    The manufacturer is onsemi.

  9. Where can I find detailed specifications for the FDMC007N08LCDC?

    Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like Mouser and RS Components).

  10. What is the significance of the shielded gate technology in the FDMC007N08LCDC?

    The shielded gate technology enhances switching characteristics and reduces gate charge, improving overall efficiency and performance).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:2.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3070 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3)
Package / Case:8-PowerWDFN
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