FDMA86108LZ
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onsemi FDMA86108LZ

Manufacturer No:
FDMA86108LZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 2.2A 6MICROFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA86108LZ is a single N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for low to medium voltage applications and is known for its high performance and reliability. It features a compact WDFN6 (MicroFET 2x2) package, making it suitable for space-constrained designs. The MOSFET is lead-free and comes in tape and reel packaging, facilitating easy integration into automated manufacturing processes.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)2.2 A (at Ta)
On-Resistance (Rds(on))243 mΩ
Power Dissipation (Pd)2.4 W (at Ta)
Package TypeWDFN6 (MicroFET 2x2)
ConfigurationSingle N-Channel with Built-in Diode
Surface MountYes

Key Features

  • High voltage rating of 100 V, making it suitable for a variety of power management applications.
  • Low on-resistance (Rds(on)) of 243 mΩ, which minimizes power losses and enhances efficiency.
  • Compact WDFN6 (MicroFET 2x2) package, ideal for space-constrained designs.
  • Built-in diode, which simplifies circuit design and reduces component count.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.

Applications

The FDMA86108LZ is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control systems, including robotics and automation.
  • Consumer electronics, such as power management in appliances and devices.

Q & A

  1. What is the voltage rating of the FDMA86108LZ MOSFET?
    The voltage rating of the FDMA86108LZ MOSFET is 100 V.
  2. What is the continuous drain current of the FDMA86108LZ?
    The continuous drain current of the FDMA86108LZ is 2.2 A at ambient temperature (Ta).
  3. What is the on-resistance (Rds(on)) of the FDMA86108LZ?
    The on-resistance (Rds(on)) of the FDMA86108LZ is 243 mΩ.
  4. What type of package does the FDMA86108LZ come in?
    The FDMA86108LZ comes in a WDFN6 (MicroFET 2x2) package.
  5. Is the FDMA86108LZ lead-free?
    Yes, the FDMA86108LZ is lead-free and RoHS compliant.
  6. What is the power dissipation of the FDMA86108LZ?
    The power dissipation (Pd) of the FDMA86108LZ is 2.4 W at ambient temperature (Ta).
  7. Does the FDMA86108LZ have a built-in diode?
    Yes, the FDMA86108LZ has a built-in diode.
  8. What are some common applications of the FDMA86108LZ?
    The FDMA86108LZ is commonly used in power supplies, motor control systems, automotive systems, industrial control systems, and consumer electronics.
  9. Is the FDMA86108LZ suitable for high-frequency applications?
    The FDMA86108LZ is generally suited for low to medium frequency applications due to its characteristics, but it can be evaluated for specific high-frequency use cases based on detailed specifications and application requirements.
  10. Where can I find detailed specifications for the FDMA86108LZ?
    Detailed specifications for the FDMA86108LZ can be found in the datasheet available on the onsemi website, as well as through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:243mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:163 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-WDFN Exposed Pad
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