FDD86102
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onsemi FDD86102

Manufacturer No:
FDD86102
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 8A/36A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86102 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is fabricated using an advanced Power Trench® process, which has been optimized for low on-resistance (rDS(on)), superior switching performance, and enhanced ruggedness. The FDD86102 is designed to meet the demands of high-performance applications requiring efficient power management and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Current Rating (Id)36 A
On-Resistance (rDS(on))24 mΩ @ 10 V, 8 A
Package TypeTO-252 (DPAK)
Power Dissipation (Pd)62 W
Threshold Voltage (Vth)2 V @ 250 μA

Key Features

  • Low on-resistance (rDS(on)) of 24 mΩ @ 10 V, 8 A for efficient power management
  • High current rating of 36 A and voltage rating of 100 V
  • Advanced Power Trench® process for superior switching performance and ruggedness
  • TO-252 (DPAK) package for compact and reliable design
  • High power dissipation capability of 62 W

Applications

The FDD86102 is suitable for a variety of high-performance applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems requiring high reliability and efficiency
  • Industrial power management systems
  • Consumer electronics requiring robust power handling

Q & A

  1. What is the voltage rating of the FDD86102 MOSFET?
    The voltage rating (Vds) of the FDD86102 is 100 V.
  2. What is the current rating of the FDD86102 MOSFET?
    The current rating (Id) of the FDD86102 is 36 A.
  3. What is the on-resistance (rDS(on)) of the FDD86102?
    The on-resistance (rDS(on)) of the FDD86102 is 24 mΩ @ 10 V, 8 A.
  4. What package type is the FDD86102 available in?
    The FDD86102 is available in the TO-252 (DPAK) package.
  5. What is the power dissipation capability of the FDD86102?
    The power dissipation capability (Pd) of the FDD86102 is 62 W.
  6. What is the threshold voltage (Vth) of the FDD86102?
    The threshold voltage (Vth) of the FDD86102 is 2 V @ 250 μA.
  7. What process is used to fabricate the FDD86102?
    The FDD86102 is fabricated using an advanced Power Trench® process.
  8. What are some typical applications for the FDD86102?
    The FDD86102 is used in power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management systems.
  9. Is the FDD86102 RoHS compliant?
    Yes, the FDD86102 is RoHS compliant.
  10. Where can I find detailed specifications for the FDD86102?
    Detailed specifications for the FDD86102 can be found in the datasheet available on onsemi’s official website and other electronic component distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1035 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 62W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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