Overview
The FDD5614P is a 60 V P-Channel MOSFET produced by onsemi, utilizing their high voltage POWERTRENCH process. This device is optimized for power management applications, offering high performance and low on-resistance. It is designed to handle high power and current, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | - | -60 | - | -60 | V |
| Gate-Source Voltage (VGSS) | - | ±20 | - | ±20 | V |
| Continuous Drain Current (ID) | - | -15 | - | -15 | A |
| Pulsed Drain Current (ID) | - | -45 | - | -45 | A |
| Power Dissipation (PD) | - | 42 | - | 42 | W |
| Operating Junction Temperature (TJ) | - | -55 to +175 | - | -55 to +175 | °C |
| Thermal Resistance, Junction to Case (RJC) | - | 3.5 | - | 3.5 | °C/W |
| Thermal Resistance, Junction to Ambient (RJA) | - | 40 / 96 | - | 40 / 96 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V | ID = -4.5 A | 76 | 100 | 100 | mΩ |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = -4.5 V | ID = -3.9 A | 99 | 130 | 130 | mΩ |
Key Features
- High voltage POWERTRENCH process for low RDS(on) and high performance.
- Fast switching speed.
- High power and current handling capability.
- Pb-Free device.
- Low on-resistance: 100 mΩ at VGS = -10 V and 130 mΩ at VGS = -4.5 V.
- High drain current capability: up to -15 A continuous and -45 A pulsed.
Applications
- DC/DC converters.
- Power management.
- Load switches.
Q & A
- What is the maximum drain-source voltage of the FDD5614P MOSFET?
The maximum drain-source voltage (VDSS) is -60 V. - What is the typical on-resistance of the FDD5614P at VGS = -10 V?
The typical on-resistance (RDS(on)) at VGS = -10 V is 100 mΩ. - What are the thermal resistance values for the FDD5614P?
The thermal resistance from junction to case (RJC) is 3.5 °C/W, and the thermal resistance from junction to ambient (RJA) can be 40 °C/W or 96 °C/W depending on the mounting conditions. - What is the maximum continuous drain current of the FDD5614P?
The maximum continuous drain current (ID) is -15 A. - What are the typical applications of the FDD5614P MOSFET?
The FDD5614P is typically used in DC/DC converters, power management, and load switches. - Is the FDD5614P a Pb-Free device?
Yes, the FDD5614P is a Pb-Free device. - What is the gate-source voltage range for the FDD5614P?
The gate-source voltage (VGSS) range is ±20 V. - What is the operating junction temperature range for the FDD5614P?
The operating junction temperature (TJ) range is -55 to +175 °C. - What is the maximum power dissipation of the FDD5614P?
The maximum power dissipation (PD) is 42 W. - What package type is the FDD5614P available in?
The FDD5614P is available in the DPAK3 (TO-252 3 LD) package.
