Overview
The FDD4243-G is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed using onsemi’s proprietary PowerTrench technology, which offers low RDS(on) and optimized BVDSS capability, providing superior performance in various applications. The FDD4243-G is housed in a DPAK3 (TO-252 3LD) package and is Pb-Free, Halide Free, and RoHS compliant.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | -40 | V | |
| VGS (Gate to Source Voltage) | - | - | ±20 | V | |
| ID (Drain Current) - Continuous (Package Limited) | TC = 25°C | - | - | -14 | A |
| ID (Drain Current) - Continuous (Silicon Limited) | TC = 25°C | - | - | -24 | A |
| ID (Drain Current) - Pulsed | - | - | -60 | A | |
| RDS(on) (Drain to Source On Resistance) | ID = -6.7 A, VGS = -10 V | - | 36 | 44 | mΩ |
| RDS(on) (Drain to Source On Resistance) | ID = -5.5 A, VGS = -4.5 V | - | 48 | 64 | mΩ |
| BVDSS (Drain to Source Breakdown Voltage) | ID = -250 μA, VGS = 0 V | - | - | -40 | V |
| EAS (Single Pulse Avalanche Energy) | - | - | - | 84 | mJ |
| PD (Power Dissipation) - TC = 25°C | - | - | - | 42 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 to +150 | - | - | °C |
| RθJC (Thermal Resistance, Junction to Case) | - | - | - | 3.0 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | - | - | - | 40 | °C/W |
Key Features
- High performance trench technology for extremely low RDS(on).
- Max RDS(on) = 44 mΩ at VGS = -10 V, ID = -6.7 A and Max RDS(on) = 64 mΩ at VGS = -4.5 V, ID = -5.5 A.
- Pb-Free, Halide Free, and RoHS compliant.
- Qualified to AEC Q101 for automotive applications.
- Low gate charge and fast switching times).
- High drain current capability up to -14 A).
Applications
- Inverters).
- Power Supplies).
- Automotive systems due to AEC Q101 qualification).
- Other high-performance power management applications requiring low RDS(on) and high current handling).
Q & A
- What is the maximum drain to source voltage (VDS) for the FDD4243-G MOSFET?
The maximum drain to source voltage (VDS) is -40 V).
- What is the maximum continuous drain current (ID) for the FDD4243-G MOSFET?
The maximum continuous drain current (ID) is -14 A).
- What is the typical on-resistance (RDS(on)) at VGS = -10 V and ID = -6.7 A?
The typical on-resistance (RDS(on)) is 36 mΩ at VGS = -10 V and ID = -6.7 A).
- Is the FDD4243-G MOSFET RoHS compliant?
- What are the typical applications for the FDD4243-G MOSFET?
The FDD4243-G MOSFET is typically used in inverters, power supplies, and automotive systems).
- What is the thermal resistance from junction to case (RθJC) for the FDD4243-G MOSFET?
The thermal resistance from junction to case (RθJC) is 3.0 °C/W).
- What is the maximum single pulse avalanche energy (EAS) for the FDD4243-G MOSFET?
The maximum single pulse avalanche energy (EAS) is 84 mJ).
- What is the operating and storage junction temperature range for the FDD4243-G MOSFET?
The operating and storage junction temperature range is -55 to +150 °C).
- What package type is the FDD4243-G MOSFET available in?
The FDD4243-G MOSFET is available in a DPAK3 (TO-252 3LD) package).
- What is the gate to source threshold voltage (VGS(th)) for the FDD4243-G MOSFET?
The gate to source threshold voltage (VGS(th)) is between -1.4 V and -3.0 V at VDS = VGS, ID = -250 μA).
