FDC658AP
  • Share:

onsemi FDC658AP

Manufacturer No:
FDC658AP
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC658AP is a P-Channel Logic Level MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This MOSFET is optimized for various applications, particularly in battery power management. It features high performance trench technology, resulting in extremely low on-resistance (RDS(on)) and low gate charge. The device is available in a SuperSOT-6 package and is RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDS)-30V
Gate-Source Voltage (VGS)±25V
Drain Current (ID) - Continuous-4A
Maximum Power Dissipation (PD)1.6W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +150°C
Thermal Resistance, Junction-to-Ambient (RθJA)78°C/W
Thermal Resistance, Junction-to-Case (RθJC)30°C/W
Maximum RDS(on) @ VGS = -10 V, ID = -4 A50 mΩ
Maximum RDS(on) @ VGS = -4.5 V, ID = -3.4 A75 mΩ
Gate Charge (Qg)8.1 nCnC

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Low gate charge
  • Logic level operation
  • Pb-Free, Halide Free, and RoHS compliant
  • Maximum RDS(on) of 50 mΩ @ VGS = -10 V, ID = -4 A
  • Maximum RDS(on) of 75 mΩ @ VGS = -4.5 V, ID = -3.4 A

Applications

  • Battery management
  • Load switch
  • Battery protection
  • DC-DC conversion

Q & A

  1. What is the maximum drain-source voltage of the FDC658AP MOSFET? The maximum drain-source voltage is -30 V.
  2. What is the maximum continuous drain current of the FDC658AP? The maximum continuous drain current is -4 A.
  3. What is the typical on-resistance (RDS(on)) of the FDC658AP? The typical on-resistance is 50 mΩ @ VGS = -10 V, ID = -4 A.
  4. Is the FDC658AP RoHS compliant? Yes, the FDC658AP is RoHS compliant.
  5. What is the gate charge of the FDC658AP? The gate charge is 8.1 nC.
  6. What are the typical applications of the FDC658AP? Typical applications include battery management, load switch, battery protection, and DC-DC conversion.
  7. What is the operating junction temperature range of the FDC658AP? The operating junction temperature range is -55°C to +150°C.
  8. What package type is the FDC658AP available in? The FDC658AP is available in a SuperSOT-6 package.
  9. What is the maximum power dissipation of the FDC658AP? The maximum power dissipation is 1.6 W.
  10. Is the FDC658AP Pb-Free and Halide Free? Yes, the FDC658AP is Pb-Free and Halide Free.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.47
1,013

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDC658AP FDC658P
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 15 V 750 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC