FDC658AP
  • Share:

onsemi FDC658AP

Manufacturer No:
FDC658AP
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC658AP is a P-Channel Logic Level MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This MOSFET is optimized for various applications, particularly in battery power management. It features high performance trench technology, resulting in extremely low on-resistance (RDS(on)) and low gate charge. The device is available in a SuperSOT-6 package and is RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDS)-30V
Gate-Source Voltage (VGS)±25V
Drain Current (ID) - Continuous-4A
Maximum Power Dissipation (PD)1.6W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +150°C
Thermal Resistance, Junction-to-Ambient (RθJA)78°C/W
Thermal Resistance, Junction-to-Case (RθJC)30°C/W
Maximum RDS(on) @ VGS = -10 V, ID = -4 A50 mΩ
Maximum RDS(on) @ VGS = -4.5 V, ID = -3.4 A75 mΩ
Gate Charge (Qg)8.1 nCnC

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Low gate charge
  • Logic level operation
  • Pb-Free, Halide Free, and RoHS compliant
  • Maximum RDS(on) of 50 mΩ @ VGS = -10 V, ID = -4 A
  • Maximum RDS(on) of 75 mΩ @ VGS = -4.5 V, ID = -3.4 A

Applications

  • Battery management
  • Load switch
  • Battery protection
  • DC-DC conversion

Q & A

  1. What is the maximum drain-source voltage of the FDC658AP MOSFET? The maximum drain-source voltage is -30 V.
  2. What is the maximum continuous drain current of the FDC658AP? The maximum continuous drain current is -4 A.
  3. What is the typical on-resistance (RDS(on)) of the FDC658AP? The typical on-resistance is 50 mΩ @ VGS = -10 V, ID = -4 A.
  4. Is the FDC658AP RoHS compliant? Yes, the FDC658AP is RoHS compliant.
  5. What is the gate charge of the FDC658AP? The gate charge is 8.1 nC.
  6. What are the typical applications of the FDC658AP? Typical applications include battery management, load switch, battery protection, and DC-DC conversion.
  7. What is the operating junction temperature range of the FDC658AP? The operating junction temperature range is -55°C to +150°C.
  8. What package type is the FDC658AP available in? The FDC658AP is available in a SuperSOT-6 package.
  9. What is the maximum power dissipation of the FDC658AP? The maximum power dissipation is 1.6 W.
  10. Is the FDC658AP Pb-Free and Halide Free? Yes, the FDC658AP is Pb-Free and Halide Free.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.47
1,013

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDC658AP FDC658P
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 15 V 750 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO

Related Product By Brand

SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3