FDC658AP
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onsemi FDC658AP

Manufacturer No:
FDC658AP
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 4A SUPERSOT6
Delivery:
Payment:
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Product Introduction

Overview

The FDC658AP is a P-Channel Logic Level MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This MOSFET is optimized for various applications, particularly in battery power management. It features high performance trench technology, resulting in extremely low on-resistance (RDS(on)) and low gate charge. The device is available in a SuperSOT-6 package and is RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDS)-30V
Gate-Source Voltage (VGS)±25V
Drain Current (ID) - Continuous-4A
Maximum Power Dissipation (PD)1.6W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +150°C
Thermal Resistance, Junction-to-Ambient (RθJA)78°C/W
Thermal Resistance, Junction-to-Case (RθJC)30°C/W
Maximum RDS(on) @ VGS = -10 V, ID = -4 A50 mΩ
Maximum RDS(on) @ VGS = -4.5 V, ID = -3.4 A75 mΩ
Gate Charge (Qg)8.1 nCnC

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Low gate charge
  • Logic level operation
  • Pb-Free, Halide Free, and RoHS compliant
  • Maximum RDS(on) of 50 mΩ @ VGS = -10 V, ID = -4 A
  • Maximum RDS(on) of 75 mΩ @ VGS = -4.5 V, ID = -3.4 A

Applications

  • Battery management
  • Load switch
  • Battery protection
  • DC-DC conversion

Q & A

  1. What is the maximum drain-source voltage of the FDC658AP MOSFET? The maximum drain-source voltage is -30 V.
  2. What is the maximum continuous drain current of the FDC658AP? The maximum continuous drain current is -4 A.
  3. What is the typical on-resistance (RDS(on)) of the FDC658AP? The typical on-resistance is 50 mΩ @ VGS = -10 V, ID = -4 A.
  4. Is the FDC658AP RoHS compliant? Yes, the FDC658AP is RoHS compliant.
  5. What is the gate charge of the FDC658AP? The gate charge is 8.1 nC.
  6. What are the typical applications of the FDC658AP? Typical applications include battery management, load switch, battery protection, and DC-DC conversion.
  7. What is the operating junction temperature range of the FDC658AP? The operating junction temperature range is -55°C to +150°C.
  8. What package type is the FDC658AP available in? The FDC658AP is available in a SuperSOT-6 package.
  9. What is the maximum power dissipation of the FDC658AP? The maximum power dissipation is 1.6 W.
  10. Is the FDC658AP Pb-Free and Halide Free? Yes, the FDC658AP is Pb-Free and Halide Free.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number FDC658AP FDC658P
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 15 V 750 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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