FDC642P-F085P
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onsemi FDC642P-F085P

Manufacturer No:
FDC642P-F085P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4A TSOT23-6
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FDC642P-F085P is a P-Channel PowerTrench® MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is part of onsemi's small signal MOSFET family and is designed to offer high performance and reliability in various applications. The FDC642P-F085P is known for its low on-resistance and is suitable for use in motor driver applications, among others.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)2.5 A
RDS(ON) (On-Resistance)85 mΩ (typical at VGS = -4.5 V)
Ciss (Input Capacitance)350 pF (typical)
Coss (Output Capacitance)150 pF (typical)
Crss (Reverse Transfer Capacitance)30 pF (typical)
TJ (Junction Temperature)-55°C to 150°C

Key Features

  • Low On-Resistance: The FDC642P-F085P features a low on-resistance of 85 mΩ, making it efficient for power management.
  • High Current Capability: It can handle a continuous drain current of 2.5 A.
  • Dual Protection: This MOSFET includes temperature and current limit protections, enhancing its reliability.
  • PowerTrench Technology: Utilizes onsemi's PowerTrench technology for improved performance and reduced power losses.

Applications

The FDC642P-F085P is particularly suited for motor driver applications, DC-DC converters, and other power management circuits where low on-resistance and high current handling are critical. It is also applicable in various industrial and automotive systems requiring reliable and efficient power switching.

Q & A

  1. What is the maximum drain-source voltage of the FDC642P-F085P?
    The maximum drain-source voltage (VDS) is -20 V.
  2. What is the typical on-resistance of the FDC642P-F085P?
    The typical on-resistance (RDS(ON)) is 85 mΩ at VGS = -4.5 V.
  3. What is the continuous drain current rating of the FDC642P-F085P?
    The continuous drain current (ID) is 2.5 A.
  4. Does the FDC642P-F085P have any built-in protections?
    Yes, it includes temperature and current limit protections.
  5. What technology is used in the FDC642P-F085P?
    The FDC642P-F085P uses onsemi's PowerTrench technology.
  6. What are some common applications for the FDC642P-F085P?
    Common applications include motor drivers, DC-DC converters, and other power management circuits.
  7. What is the junction temperature range for the FDC642P-F085P?
    The junction temperature range is -55°C to 150°C.
  8. Where can I find detailed specifications for the FDC642P-F085P?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and Mouser.
  9. Is the FDC642P-F085P still in production?
    The FDC642P-F085P is listed as active, but it is advisable to check with the manufacturer or distributors for the latest availability.
  10. What is the typical input capacitance of the FDC642P-F085P?
    The typical input capacitance (Ciss) is 350 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:65mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:630 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSOT-23-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC642P-F085
FDC642P-F085
MOSFET P-CH 20V 4A SUPERSOT6

Similar Products

Part Number FDC642P-F085P FDC642P-F085
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 4A, 4.5V 65mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 16 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 10 V 640 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TSOT-23-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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