FDC5614P_D87Z
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onsemi FDC5614P_D87Z

Manufacturer No:
FDC5614P_D87Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 3A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC5614P_D87Z is a P-Channel MOSFET produced by onsemi, utilizing their high voltage POWERTRENCH process. This device is optimized for power management applications and is known for its high performance and low on-resistance. It is packaged in a SuperSOT-6 surface mount configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -60 V
Gate-Source Voltage (VGSS) ±20 V
Drain Current (ID) - Continuous -3 A
Drain-Source On Resistance (RDS(on)) @ VGS = -10 V 0.105 Ω
Drain-Source On Resistance (RDS(on)) @ VGS = -4.5 V 0.135 Ω
Power Dissipation (PD) 0.8 W
Gate Charge (Qg) 15 nC
Package Style SuperSOT-6
Mounting Method Surface Mount

Key Features

  • High voltage POWERTRENCH process for high performance and low on-resistance.
  • Fast switching speed, making it suitable for high-frequency applications.
  • Low RDS(on) of 0.105 Ω @ VGS = -10 V and 0.135 Ω @ VGS = -4.5 V.
  • Pb-Free and Halide-Free device, ensuring environmental compliance.
  • High current handling capability of up to -3 A.

Applications

  • DC-DC converters for efficient power conversion.
  • Load switches for managing power distribution.
  • Power management in various electronic devices such as video game consoles, flat panel TVs, DVRs, and set-top boxes.
  • External AC-DC merchant power supplies for wireless communications and wireless LAN access.
  • Military and civil aerospace applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the FDC5614P?

    The maximum drain-source voltage (VDSS) is -60 V.

  2. What is the continuous drain current rating of the FDC5614P?

    The continuous drain current (ID) rating is -3 A.

  3. What is the typical on-resistance of the FDC5614P at VGS = -10 V?

    The typical on-resistance (RDS(on)) at VGS = -10 V is 0.105 Ω.

  4. What is the package style of the FDC5614P?

    The package style is SuperSOT-6.

  5. What are the primary applications of the FDC5614P?

    The primary applications include DC-DC converters, load switches, and power management in various electronic devices.

  6. Is the FDC5614P Pb-Free and Halide-Free?
  7. What is the maximum gate-source voltage of the FDC5614P?

    The maximum gate-source voltage (VGSS) is ±20 V.

  8. What is the power dissipation rating of the FDC5614P?

    The power dissipation (PD) rating is 0.8 W.

  9. What is the gate charge (Qg) of the FDC5614P?

    The gate charge (Qg) is 15 nC.

  10. Is the FDC5614P suitable for high-frequency applications?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:759 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC5614P
FDC5614P
MOSFET P-CH 60V 3A SUPERSOT6

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