FDBL0260N100
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onsemi FDBL0260N100

Manufacturer No:
FDBL0260N100
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 200A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL0260N100 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-power applications and is known for its robust performance and reliability. Although the product is currently listed as obsolete and not in production, it remains relevant for reference and existing designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current at TC)200 A
PD (Power Dissipation at TA)3.5 W
PD (Power Dissipation at TC)250 W
RDS(ON) (On-Resistance)Typically 2.5 mΩ
Package8-HPSOF (Surface Mount)

Key Features

  • High current capability: Up to 200 A continuous drain current at TC.
  • Low on-resistance: Typically 2.5 mΩ, which reduces power losses and improves efficiency.
  • High power dissipation: 250 W at TC and 3.5 W at TA, making it suitable for high-power applications.
  • PowerTrench® technology: Enhances performance by reducing the on-resistance and increasing the current handling capability.
  • Surface mount package: 8-HPSOF, which is compact and suitable for modern PCB designs.

Applications

The FDBL0260N100 is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching and amplification.
  • Automotive and industrial power systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the FDBL0260N100?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current at TC for this MOSFET?
    The continuous drain current at TC is 200 A.
  3. What is the typical on-resistance of the FDBL0260N100?
    The typical on-resistance is 2.5 mΩ.
  4. What package type is the FDBL0260N100 available in?
    The FDBL0260N100 is available in an 8-HPSOF surface mount package.
  5. Is the FDBL0260N100 still in production?
    No, the FDBL0260N100 is currently listed as obsolete and not in production.
  6. What technology is used in the FDBL0260N100?
    The FDBL0260N100 uses PowerTrench® technology.
  7. What are some common applications for the FDBL0260N100?
    Common applications include power supplies, motor control, high-power switching, automotive and industrial power systems, and renewable energy systems.
  8. What is the power dissipation at TA for this MOSFET?
    The power dissipation at TA is 3.5 W.
  9. What is the power dissipation at TC for this MOSFET?
    The power dissipation at TC is 250 W.
  10. Where can I find detailed specifications for the FDBL0260N100?
    Detailed specifications can be found in the datasheet available from onsemi and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9265 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.5W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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Similar Products

Part Number FDBL0260N100 FDBL0200N100 FDBL0240N100
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 300A (Tc) 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 80A, 10V 2mOhm @ 80A, 10V 2.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V 133 nC @ 10 V 111 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9265 pF @ 50 V 9760 pF @ 50 V 8755 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 3.5W (Ta), 250W (Tc) 429W (Tc) 3.5W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN

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