FDBL0240N100
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onsemi FDBL0240N100

Manufacturer No:
FDBL0240N100
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 210A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL0240N100 is a high-performance N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to offer exceptional power handling capabilities, making it suitable for a variety of high-power applications. With its robust construction and advanced semiconductor technology, the FDBL0240N100 provides reliable and efficient operation in demanding environments.

Key Specifications

ParameterValue
Drain Current (ID) - Max210 A
Drain-Source On Resistance (Rds(on)) - Max2.8 mΩ @ 80 A, 10 V
Drain-Source Breakdown Voltage (Vds) - Min100 V
Gate Threshold Voltage (Vgs(th))2.9 V @ 250 μA
Junction Temperature (TJ) - Max175 °C
Package TypeHPSOF-8
ROHS ComplianceYes

Key Features

  • High current handling capability of up to 210 A.
  • Low on-resistance of 2.8 mΩ at 80 A and 10 V.
  • High drain-source breakdown voltage of 100 V.
  • Gate threshold voltage of 2.9 V at 250 μA.
  • High junction temperature rating of up to 175 °C.
  • ROHS compliant, ensuring environmental sustainability.
  • Advanced PowerTrench® technology for improved performance and reliability.

Applications

The FDBL0240N100 is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Automotive systems requiring high current and low on-resistance.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain current of the FDBL0240N100?
    The maximum drain current is 210 A.
  2. What is the on-resistance of the FDBL0240N100 at 80 A and 10 V?
    The on-resistance is 2.8 mΩ.
  3. What is the minimum drain-source breakdown voltage of the FDBL0240N100?
    The minimum drain-source breakdown voltage is 100 V.
  4. What is the gate threshold voltage of the FDBL0240N100?
    The gate threshold voltage is 2.9 V at 250 μA.
  5. What is the maximum junction temperature of the FDBL0240N100?
    The maximum junction temperature is 175 °C.
  6. Is the FDBL0240N100 ROHS compliant?
    Yes, the FDBL0240N100 is ROHS compliant.
  7. What package type does the FDBL0240N100 come in?
    The FDBL0240N100 comes in an HPSOF-8 package.
  8. What are some typical applications of the FDBL0240N100?
    Typical applications include power supplies, motor control systems, industrial power systems, automotive systems, and renewable energy systems.
  9. What technology is used in the FDBL0240N100?
    The FDBL0240N100 uses advanced PowerTrench® technology.
  10. Where can I find detailed specifications for the FDBL0240N100?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component databases.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:111 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8755 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.5W (Ta), 300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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Similar Products

Part Number FDBL0240N100 FDBL0260N100 FDBL0200N100
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 210A (Tc) 200A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V 2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V 116 nC @ 10 V 133 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8755 pF @ 50 V 9265 pF @ 50 V 9760 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 3.5W (Ta), 300W (Tc) 3.5W (Ta), 250W (Tc) 429W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN

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