FDBL0200N100
  • Share:

onsemi FDBL0200N100

Manufacturer No:
FDBL0200N100
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 300A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL0200N100 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a voltage rating of 100V and a maximum current of 300A, making it suitable for a variety of industrial and power supply applications.

Key Specifications

ParameterValue
Voltage Rating (VDS)100V
Maximum Current (ID)300A
On-Resistance (RDS(on))2.0mΩ at VGS = 10V, ID = 80A
Package TypeSurface Mount 8-HPSOF
Maximum Power Dissipation (PD)429W (Tc)
Gate Threshold Voltage (VGS(th))±20V

Key Features

  • Low on-resistance (RDS(on)) of 2.0mΩ at VGS = 10V, ID = 80A
  • High current handling capability of up to 300A
  • 100V voltage rating, suitable for various industrial applications
  • Surface Mount 8-HPSOF package for efficient thermal management and compact design
  • RoHS compliant, ensuring environmental sustainability

Applications

  • Industrial Motor Drive
  • Industrial Power Supply
  • Industrial Automation
  • Battery Operated Tools

Q & A

  1. What is the voltage rating of the FDBL0200N100 MOSFET?
    The voltage rating of the FDBL0200N100 MOSFET is 100V.
  2. What is the maximum current handling capability of the FDBL0200N100?
    The maximum current handling capability is up to 300A.
  3. What is the on-resistance (RDS(on)) of the FDBL0200N100?
    The on-resistance is 2.0mΩ at VGS = 10V, ID = 80A.
  4. What package type does the FDBL0200N100 use?
    The FDBL0200N100 uses a Surface Mount 8-HPSOF package.
  5. Is the FDBL0200N100 RoHS compliant?
    Yes, the FDBL0200N100 is RoHS compliant.
  6. What are some typical applications for the FDBL0200N100?
    Typical applications include Industrial Motor Drive, Industrial Power Supply, Industrial Automation, and Battery Operated Tools.
  7. What is the maximum power dissipation (PD) of the FDBL0200N100?
    The maximum power dissipation is 429W (Tc).
  8. What is the gate threshold voltage (VGS(th)) of the FDBL0200N100?
    The gate threshold voltage is ±20V.
  9. Is the FDBL0200N100 suitable for high-frequency applications?
    While it is versatile, its suitability for high-frequency applications should be evaluated based on specific requirements and additional parameters.
  10. Where can I find detailed specifications and datasheets for the FDBL0200N100?
    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9760 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):429W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$7.39
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDBL0200N100 FDBL0240N100 FDBL0260N100
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 210A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 80A, 10V 2.8mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V 111 nC @ 10 V 116 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9760 pF @ 50 V 8755 pF @ 50 V 9265 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 429W (Tc) 3.5W (Ta), 300W (Tc) 3.5W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE