FDBL0200N100
  • Share:

onsemi FDBL0200N100

Manufacturer No:
FDBL0200N100
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 300A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL0200N100 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a voltage rating of 100V and a maximum current of 300A, making it suitable for a variety of industrial and power supply applications.

Key Specifications

ParameterValue
Voltage Rating (VDS)100V
Maximum Current (ID)300A
On-Resistance (RDS(on))2.0mΩ at VGS = 10V, ID = 80A
Package TypeSurface Mount 8-HPSOF
Maximum Power Dissipation (PD)429W (Tc)
Gate Threshold Voltage (VGS(th))±20V

Key Features

  • Low on-resistance (RDS(on)) of 2.0mΩ at VGS = 10V, ID = 80A
  • High current handling capability of up to 300A
  • 100V voltage rating, suitable for various industrial applications
  • Surface Mount 8-HPSOF package for efficient thermal management and compact design
  • RoHS compliant, ensuring environmental sustainability

Applications

  • Industrial Motor Drive
  • Industrial Power Supply
  • Industrial Automation
  • Battery Operated Tools

Q & A

  1. What is the voltage rating of the FDBL0200N100 MOSFET?
    The voltage rating of the FDBL0200N100 MOSFET is 100V.
  2. What is the maximum current handling capability of the FDBL0200N100?
    The maximum current handling capability is up to 300A.
  3. What is the on-resistance (RDS(on)) of the FDBL0200N100?
    The on-resistance is 2.0mΩ at VGS = 10V, ID = 80A.
  4. What package type does the FDBL0200N100 use?
    The FDBL0200N100 uses a Surface Mount 8-HPSOF package.
  5. Is the FDBL0200N100 RoHS compliant?
    Yes, the FDBL0200N100 is RoHS compliant.
  6. What are some typical applications for the FDBL0200N100?
    Typical applications include Industrial Motor Drive, Industrial Power Supply, Industrial Automation, and Battery Operated Tools.
  7. What is the maximum power dissipation (PD) of the FDBL0200N100?
    The maximum power dissipation is 429W (Tc).
  8. What is the gate threshold voltage (VGS(th)) of the FDBL0200N100?
    The gate threshold voltage is ±20V.
  9. Is the FDBL0200N100 suitable for high-frequency applications?
    While it is versatile, its suitability for high-frequency applications should be evaluated based on specific requirements and additional parameters.
  10. Where can I find detailed specifications and datasheets for the FDBL0200N100?
    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9760 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):429W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
0 Remaining View Similar

In Stock

$7.39
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDBL0200N100 FDBL0240N100 FDBL0260N100
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 210A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 80A, 10V 2.8mOhm @ 80A, 10V 2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V 111 nC @ 10 V 116 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9760 pF @ 50 V 8755 pF @ 50 V 9265 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 429W (Tc) 3.5W (Ta), 300W (Tc) 3.5W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP