FDB33N25TM
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onsemi FDB33N25TM

Manufacturer No:
FDB33N25TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 250V 33A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB33N25TM is a high-voltage N-Channel MOSFET from onsemi, part of the SuperFET®II family. This device utilizes charge balance technology and is known for its high performance and efficiency. It is designed to meet the demands of various high-power applications, offering superior switching characteristics and low on-resistance.

Key Specifications

TypeDescription
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V

Key Features

  • High voltage rating of 250V, making it suitable for high-power applications.
  • Low on-resistance (Rds On) of 94mOhm at 16.5A and 10V, enhancing efficiency and reducing power losses.
  • Utilizes charge balance technology, a hallmark of the SuperFET®II family, for improved performance and reliability.
  • Low gate charge (Qg) of 48 nC at 10 V, facilitating faster switching times and reduced switching losses.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drive voltage for the FDB33N25TM MOSFET?
    The maximum drive voltage is 10V.
  2. What is the on-resistance (Rds On) of the FDB33N25TM at 16.5A and 10V?
    The on-resistance (Rds On) is 94mOhm at 16.5A and 10V.
  3. What is the threshold voltage (Vgs(th)) of the FDB33N25TM?
    The threshold voltage (Vgs(th)) is 5V at 250µA.
  4. What is the gate charge (Qg) of the FDB33N25TM at 10 V?
    The gate charge (Qg) is 48 nC at 10 V.
  5. What technology does the FDB33N25TM utilize?
    The FDB33N25TM utilizes charge balance technology, part of the SuperFET®II family.
  6. What are some common applications for the FDB33N25TM?
    Common applications include power supplies, DC-DC converters, motor control systems, high-frequency switching applications, and industrial/automotive power management systems.
  7. What is the voltage rating of the FDB33N25TM?
    The voltage rating is 250V.
  8. Where can I find detailed specifications for the FDB33N25TM?
    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser Electronics, and the official onsemi website.
  9. Is the FDB33N25TM suitable for high-power applications?
    Yes, it is designed for high-power applications due to its high voltage rating and low on-resistance.
  10. What are the benefits of using the SuperFET®II technology in the FDB33N25TM?
    The benefits include improved performance, efficiency, and reliability due to the charge balance technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:94mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2135 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):235W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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