Overview
The FDA59N30 is a high-voltage N-Channel MOSFET from onsemi, part of their UniFET™ family. This device is designed using planar stripe and DMOS technology to reduce on-state resistance and enhance switching performance. It also boasts higher avalanche energy strength, making it suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | 300 | V |
| On-State Resistance (RDS(on)) | 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A | mΩ |
| Gate Charge (Qg) | 77 nC (Typ.) | nC |
| Output Capacitance (Crss) | 80 pF (Typ.) | pF |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.25 °C/W | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 40 °C/W | °C/W |
| Maximum Drain Current (ID) | 59 A | A |
Key Features
- Low on-state resistance (RDS(on)) of 47 mΩ (Typ.) at VGS = 10 V, ID = 29.5 A
- Low gate charge (Qg) of 77 nC (Typ.)
- Low output capacitance (Crss) of 80 pF (Typ.)
- High avalanche energy strength
- 100% avalanche tested
Applications
- Power Factor Correction (PFC)
- Flat Panel Display (FPD) TV power
- ATX power supplies
- Electronic lamp ballasts
- Uninterruptible Power Supply (UPS)
- AC-DC power supplies
Q & A
- What is the maximum drain-source breakdown voltage of the FDA59N30 MOSFET?
The maximum drain-source breakdown voltage (BVDSS) is 300 V.
- What is the typical on-state resistance of the FDA59N30?
The typical on-state resistance (RDS(on)) is 47 mΩ at VGS = 10 V, ID = 29.5 A.
- What are the thermal resistance values for the FDA59N30?
The thermal resistance from junction to case (RθJC) is 0.25 °C/W, and from junction to ambient (RθJA) is 40 °C/W.
- What is the maximum drain current rating for the FDA59N30?
The maximum drain current (ID) is 59 A.
- What are some common applications of the FDA59N30 MOSFET?
Common applications include Power Factor Correction (PFC), FPD TV power, ATX power supplies, electronic lamp ballasts, UPS, and AC-DC power supplies.
- Is the FDA59N30 100% avalanche tested?
- What technology is used in the FDA59N30 MOSFET?
The FDA59N30 uses planar stripe and DMOS technology.
- What is the typical gate charge for the FDA59N30?
The typical gate charge (Qg) is 77 nC.
- What is the output capacitance of the FDA59N30?
The output capacitance (Crss) is typically 80 pF.
- Where can I find more detailed specifications for the FDA59N30?
You can find detailed specifications in the datasheet available on onsemi's official website or through distributors like Mouser Electronics.
