FCP099N65S3
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onsemi FCP099N65S3

Manufacturer No:
FCP099N65S3
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 30A TO220-3
Delivery:
Payment:
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Product Introduction

Overview

The FCP099N65S3 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The FCP099N65S3 is particularly useful in managing EMI issues and simplifying design implementation.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) 30 A (at TC = 25°C)
Pulsed Drain Current (IDM) 75 A
Static Drain to Source On Resistance (RDS(on)) 79 - 99 mΩ (at VGS = 10 V, ID = 15 A)
Gate Threshold Voltage (VGS(th)) 2.5 - 4.5 V
Total Gate Charge (Qg) 61 nC (at VGS = 10 V, ID = 15 A)
Effective Output Capacitance (Coss(eff.)) 544 pF
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance, Junction to Case (RθJC) 0.55 °C/W

Key Features

  • High voltage super-junction (SJ) MOSFET with charge balance technology for low on-resistance and lower gate charge.
  • Ultra-low gate charge (Typ. Qg = 61 nC) and low effective output capacitance (Typ. Coss(eff.) = 544 pF).
  • 100% avalanche tested and Pb-free, RoHS compliant.
  • Superior switching performance and ability to withstand extreme dv/dt rates.
  • Easier design implementation and EMI management.

Applications

  • Telecom and server power supplies.
  • Industrial power supplies.
  • UPS (Uninterruptible Power Supplies) and solar power systems.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FCP099N65S3?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the continuous drain current (ID) rating at 25°C?

    The continuous drain current (ID) rating at 25°C is 30 A.

  3. What is the typical on-resistance (RDS(on)) of the FCP099N65S3?

    The typical on-resistance (RDS(on)) is 79 mΩ at VGS = 10 V, ID = 15 A.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V.

  5. What is the total gate charge (Qg) at VGS = 10 V?

    The total gate charge (Qg) at VGS = 10 V is 61 nC.

  6. Is the FCP099N65S3 Pb-free and RoHS compliant?
  7. What are the typical applications of the FCP099N65S3?

    The typical applications include telecom and server power supplies, industrial power supplies, and UPS/solar power systems.

  8. What is the maximum operating temperature range?

    The maximum operating temperature range is -55 to +150°C.

  9. What is the thermal resistance, junction to case (RθJC)?

    The thermal resistance, junction to case (RθJC), is 0.55°C/W.

  10. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2480 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FCP099N65S3 FCPF099N65S3
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 400 V 2310 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 227W (Tc) 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220F
Package / Case TO-220-3 TO-220-3 Full Pack

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