FCH47N60F-F133
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onsemi FCH47N60F-F133

Manufacturer No:
FCH47N60F-F133
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 600V 47A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH47N60F-F133 is a high-performance N-Channel MOSFET from onsemi, part of their SuperFET® and FRFET® family. This device is designed using charge balance technology, which offers outstanding low on-resistance and lower gate charge performance. It is packaged in a TO-247-3 case and is suitable for high-voltage applications requiring superior switching performance and minimal conduction loss.

Key Specifications

Status Active, Not Rec Compliance PbAHP
Package Type TO-247-3 Case Outline 340CK
MSL Type NA MSL Temp (°C) 0
Container Type TUBE Container Qty. 450
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 600
ID Max (A) 47 PD Max (W) 417
RDS(on) Max @ VGS = 10 V (mΩ) 73 Qg Typ @ VGS = 10 V (nC) 210
Vgs (Max) (V) ±30 Vgs(th) (Max) @ Id (V) 5 @ 250µA
Operating Temperature (°C) -55 to 150 Maximum Junction Temperature (°C) 150

Key Features

  • High voltage capability: Rated for 600 volts.
  • Fast recovery time: Optimized body diode reverse recovery performance.
  • Low power consumption: Ultra-low gate charge (Typ. Qg = 210 nC).
  • Rapid switching speed: Superior switching performance with low on-resistance (Typ. RDS(on) = 58 mΩ).
  • High temperature resistant: Operating temperature range from -55°C to 150°C.
  • Compact design package: TO-247-3 case.

Applications

  • Switching power applications: PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
  • Solar inverters.
  • AC-DC power supplies.

Q & A

  1. What is the maximum drain-source voltage of the FCH47N60F-F133 MOSFET?

    The maximum drain-source voltage (Vdss) is 600 volts.

  2. What is the maximum drain current of the FCH47N60F-F133 MOSFET?

    The maximum drain current (Id) is 47 amps.

  3. What is the package type of the FCH47N60F-F133 MOSFET?

    The package type is TO-247-3.

  4. What is the maximum gate-source voltage of the FCH47N60F-F133 MOSFET?

    The maximum gate-source voltage (Vgs) is ±30 volts.

  5. What are the key features of the FCH47N60F-F133 MOSFET?

    Key features include high voltage capability, fast recovery time, low power consumption, rapid switching speed, and high temperature resistance.

  6. What are the typical applications of the FCH47N60F-F133 MOSFET?

    Typical applications include switching power supplies, solar inverters, and AC-DC power supplies.

  7. What is the maximum junction temperature of the FCH47N60F-F133 MOSFET?

    The maximum junction temperature (Tj) is 150°C..

  8. Is the FCH47N60F-F133 MOSFET RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  9. What is the maximum power dissipation of the FCH47N60F-F133 MOSFET?

    The maximum power dissipation (Pd) is 417 watts.

  10. What is the typical on-resistance of the FCH47N60F-F133 MOSFET?

    The typical on-resistance (RDS(on)) is 58 mΩ at Vgs = 10 V.

  11. What is the total gate charge of the FCH47N60F-F133 MOSFET?

    The total gate charge (Qg) is typically 210 nC at Vgs = 10 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:8000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number FCH47N60F-F133 FCH47N60-F133
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 23.5A, 10V 70mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V 270 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V 8000 F @ 25 V
FET Feature - -
Power Dissipation (Max) 417W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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