Overview
The FCH47N60-F133 is a high-voltage N-Channel MOSFET from onsemi, part of their SuperFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss and provide superior switching performance, making it highly suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 600 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 47 | A |
| Continuous Drain Current (ID) at TC = 100°C | 29.7 | A |
| Pulsed Drain Current (IDM) | 141 | A |
| Static Drain to Source On Resistance (RDS(ON)) at VGS = 10 V | 0.058 - 0.070 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Total Gate Charge (Qg(tot)) at VGS = 10 V | 210 - 270 | nC |
| Thermal Resistance, Junction to Case (RθJC) | 0.3 | °C/W |
| Operating and Storage Temperature Range | -55 to +150 | °C |
Key Features
- Ultra-low on-resistance (Typ. RDS(ON) = 58 mΩ) at VGS = 10 V.
- Low effective output capacitance (Typ. Coss(eff.) = 420 pF).
- Ultra-low gate charge (Typ. Qg = 210 nC).
- 100% avalanche tested.
- Pb-free and RoHS compliant.
- High dv/dt rate and higher avalanche energy.
Applications
- Telecom and server power supplies.
- Industrial power supplies.
- Power factor correction (PFC) applications.
- FPD TV power supplies.
- ATX power supplies.
Q & A
- What is the maximum drain to source voltage of the FCH47N60-F133 MOSFET?
The maximum drain to source voltage (VDSS) is 600 V. - What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at TC = 25°C is 47 A. - What is the typical on-resistance of the FCH47N60-F133?
The typical static drain to source on resistance (RDS(ON)) at VGS = 10 V is 58 mΩ. - Is the FCH47N60-F133 Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant. - What are the typical gate charge values for this MOSFET?
The total gate charge (Qg(tot)) at VGS = 10 V is typically 210 nC. - What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 0.3 °C/W. - What are the operating and storage temperature ranges for this device?
The operating and storage temperature range is -55 to +150 °C. - What are some common applications for the FCH47N60-F133?
Common applications include telecom and server power supplies, industrial power supplies, PFC applications, FPD TV power supplies, and ATX power supplies. - What is the maximum pulsed drain current rating?
The maximum pulsed drain current (IDM) is 141 A. - What is the gate threshold voltage range for this MOSFET?
The gate threshold voltage (VGS(th)) range is 3 to 5 V.
