Overview
The BSS84 is a P-channel enhancement-mode field-effect transistor (MOSFET) produced by onsemi using their proprietary high cell density DMOS technology. This technology minimizes on-state resistance, providing rugged and reliable performance along with fast switching capabilities. The BSS84 is suitable for a wide range of applications, particularly those requiring low-voltage and low-current high-side switching. It can handle up to 0.13 A DC and deliver current up to 0.52 A, making it versatile for various general-purpose and power management applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -50 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current | ID | -0.13 | A |
| Pulsed Drain Current | IDM | -0.52 | A |
| Maximum Power Dissipation | PD | 0.36 | W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Static Drain-Source On-Resistance | RDS(on) | 10 Ω @ VGS = -5 V | Ω |
| Gate Threshold Voltage | VGS(th) | -0.8 to -2.0 | V |
| Input Capacitance | Ciss | 24.6 to 45 pF | pF |
| Output Capacitance | Coss | 4.7 to 25 pF | pF |
| Reverse Transfer Capacitance | Crss | 2.8 to 12 pF | pF |
Key Features
- Low On-Resistance: RDS(on) = 10 Ω at VGS = -5 V, ensuring high efficiency in power management applications.
- Low Gate Threshold Voltage: VGS(th) ranges from -0.8 to -2.0 V, facilitating easy switching.
- Low Input Capacitance: Ciss of 24.6 to 45 pF, contributing to fast switching speeds.
- Fast Switching Speed: Suitable for applications requiring quick and efficient switching.
- Low Input/Output Leakage: Minimal leakage current, enhancing overall device reliability.
- High-Density Cell Design: Utilizes DMOS technology to minimize on-state resistance and ensure rugged performance.
- High Saturation Current: Can deliver current up to 0.52 A, making it suitable for a variety of applications.
- Pb-Free and Halogen-Free: Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).
Applications
- General Purpose Interfacing Switch: Suitable for various switching applications due to its low on-state resistance and fast switching capabilities.
- Power Management Functions: Ideal for high-efficiency power management applications, including voltage regulation and power switching.
- Analog Switch: Can be used as an analog switch in low-voltage applications requiring precise control.
- Low-Voltage Applications: Particularly suited for applications requiring a low-current high-side switch in low-voltage environments.
Q & A
- What is the maximum drain-source voltage of the BSS84 MOSFET?
The maximum drain-source voltage (VDSS) is -50 V.
- What is the continuous drain current rating of the BSS84?
The continuous drain current (ID) is -0.13 A.
- What is the maximum power dissipation of the BSS84?
The maximum power dissipation (PD) is 0.36 W.
- What is the operating and storage junction temperature range for the BSS84?
The operating and storage junction temperature range (TJ, TSTG) is -55 to +150 °C.
- What is the typical on-state resistance of the BSS84?
The typical on-state resistance (RDS(on)) is 10 Ω at VGS = -5 V.
- Is the BSS84 Pb-free and halogen-free?
Yes, the BSS84 is Pb-free and halogen-free, complying with EU RoHS directives.
- What are the typical applications of the BSS84 MOSFET?
The BSS84 is typically used in general-purpose interfacing, power management functions, and as an analog switch in low-voltage applications.
- What is the gate threshold voltage range of the BSS84?
The gate threshold voltage (VGS(th)) ranges from -0.8 to -2.0 V.
- What is the input capacitance of the BSS84?
The input capacitance (Ciss) is between 24.6 to 45 pF.
- Is the BSS84 suitable for high-efficiency power management applications?
Yes, the BSS84 is designed to minimize on-state resistance and maintain superior switching performance, making it ideal for high-efficiency power management applications.
