BSS138W
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onsemi BSS138W

Manufacturer No:
BSS138W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 210MA SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W is an N-Channel Logic Level Enhancement Mode Field Effect Transistor produced by onsemi. This MOSFET is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Specifications

Parameter Symbol Conditions Unit Value
Drain-Source Voltage VDSS V 50
Gate-Source Voltage VGSS V ±20
Continuous Drain Current ID A 0.21
Pulsed Drain Current ID A 0.84
Maximum Power Dissipation PD mW 340
On-State Resistance RDS(on) VGS = 10 V, ID = 0.22 A Ω 3.5
On-State Resistance RDS(on) VGS = 4.5 V, ID = 0.22 A Ω 6.0
Gate to Source Threshold Voltage VGS(th) V 0.8 - 1.5
Input Capacitance Ciss pF 32 - 43
Output Capacitance Coss pF 7.2 - 10
Reverse Transfer Capacitance Crss pF 2.8 - 4.2
Thermal Resistance, Junction to Ambient RθJA °C/W 367

Key Features

  • High density cell design for extremely low RDS(on)
  • Rugged and reliable operation
  • Compact industry standard SOT-323 surface mount package
  • Pb-free and halide-free
  • Fast switching performance
  • Low input capacitance
  • Low gate threshold voltage
  • Low input/output leakage

Applications

  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications
  • Power management

Q & A

  1. What is the maximum drain-source voltage of the BSS138W MOSFET?

    The maximum drain-source voltage (VDSS) is 50 V.

  2. What is the typical on-state resistance of the BSS138W at VGS = 10 V and ID = 0.22 A?

    The typical on-state resistance (RDS(on)) is 3.5 Ω.

  3. What is the gate to source threshold voltage range of the BSS138W?

    The gate to source threshold voltage (VGS(th)) range is 0.8 to 1.5 V.

  4. What is the maximum continuous drain current of the BSS138W?

    The maximum continuous drain current (ID) is 0.21 A.

  5. What is the thermal resistance, junction to ambient, of the BSS138W?

    The thermal resistance, junction to ambient (RθJA), is 367 °C/W.

  6. What package type does the BSS138W come in?

    The BSS138W comes in a compact industry standard SOT-323 surface mount package.

  7. Is the BSS138W Pb-free and halide-free?

    Yes, the BSS138W is Pb-free and halide-free.

  8. What are some typical applications of the BSS138W?

    Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.

  9. What is the maximum operating temperature of the BSS138W?

    The maximum operating temperature is 150 °C.

  10. What is the input capacitance range of the BSS138W?

    The input capacitance (Ciss) range is 32 to 43 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:38 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):340mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number BSS138W BSS138 BSS138K BSS138L
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 210mA (Ta) 220mA (Ta) 220mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 1.8V, 2.5V 2.75V, 5V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 1.6Ohm @ 50mA, 5V 3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.2V @ 250µA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 10 V 2.4 nC @ 10 V 2.4 nC @ 10 V 2.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 25 V 27 pF @ 25 V 58 pF @ 25 V 50 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 340mW (Ta) 360mW (Ta) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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