Overview
The BSS138L is an N-Channel, logic level, enhancement mode field effect transistor (FET) produced by onsemi. This device is manufactured using high cell density, trench MOSFET technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. The BSS138L is particularly suited for low-voltage, low-current applications and is available in a compact, industry-standard SOT-23 surface mount package. It is Pb-free, halide-free, and RoHS compliant, making it an environmentally friendly option.
Key Specifications
| Parameter | Value | Unit | Test Conditions |
|---|---|---|---|
| Drain-Source Breakdown Voltage (VDS) | 50 | V | VGS = 0 V, ID = 250 µA |
| Drain Current (ID) | 0.22 | A | |
| On-State Resistance (RDS(ON)) at VGS = 10 V | 3.5 | Ω | |
| On-State Resistance (RDS(ON)) at VGS = 4.5 V | 6.0 | Ω | |
| Gate-Source Threshold Voltage (VGS(th)) | 1.5 | V | |
| Input Capacitance (Ciss) | 27 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz |
| Output Capacitance (Coss) | 13 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz |
| Reverse Transfer Capacitance (Crss) | 6 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz |
| Turn-On Delay Time (td(on)) | 2.5 - 5 | ns | VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω |
| Turn-On Rise Time (tr) | 9 - 18 | ns | VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω |
Key Features
- High density cell design for extremely low RDS(ON)
- Rugged and reliable performance
- Compact industry-standard SOT-23 surface mount package
- Very low capacitance
- Fast switching speed
- Pb-free, halide-free, and RoHS compliant
- Low threshold voltage
Applications
- DC-DC converters
- Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones
- Small servo motor control
- Power MOSFET gate drivers
- Logic level translators
- High-speed line drivers
- Power management/power supply and switching applications
Q & A
- What is the BSS138L MOSFET used for?
The BSS138L is used in various low-voltage, low-current applications such as DC-DC converters, power management in portable devices, small servo motor control, and power MOSFET gate drivers.
- What is the maximum drain-source breakdown voltage of the BSS138L?
The maximum drain-source breakdown voltage (VDS) is 50 V.
- What is the on-state resistance (RDS(ON)) of the BSS138L at VGS = 10 V?
The on-state resistance (RDS(ON)) at VGS = 10 V is 3.5 Ω.
- What package type is the BSS138L available in?
The BSS138L is available in a compact, industry-standard SOT-23 surface mount package.
- Is the BSS138L RoHS compliant?
Yes, the BSS138L is Pb-free, halide-free, and RoHS compliant.
- What are the typical applications for the BSS138L in power management?
Typical applications include power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
- What is the gate-source threshold voltage (VGS(th)) of the BSS138L?
The gate-source threshold voltage (VGS(th)) is approximately 1.5 V.
- What are the turn-on and turn-off times for the BSS138L?
The turn-on delay time is 2.5 - 5 ns, the turn-on rise time is 9 - 18 ns, the turn-off delay time is 20 - 36 ns, and the turn-off fall time is 7 - 15 ns.
- What is the input capacitance (Ciss) of the BSS138L?
The input capacitance (Ciss) is 27 pF at VDS = 25 V, VGS = 0 V, and f = 1.0 MHz.
- Is the BSS138L suitable for high-speed switching applications?
Yes, the BSS138L is designed for fast switching performance, making it suitable for high-speed switching applications.
