BSS138
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onsemi BSS138

Manufacturer No:
BSS138
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 220MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS138 is an N-Channel enhancement mode Field Effect Transistor (FET) produced by onsemi using their proprietary, high cell density, DMOS technology. This technology enables the BSS138 to achieve low on-state resistance while maintaining rugged, reliable, and fast switching performance. The device is optimized for low voltage, low current applications and is suitable for small servo motor control, power MOSFET gate drivers, and other switching applications. It features a compact industry-standard SOT-23 surface-mount package and is Pb-free and Halogen-free, aligning with current environmental standards for electronic components.

Key Specifications

Parameter Value Units
Channel Type N-Channel
Maximum Continuous Drain Current 220 mA
Maximum Drain-Source Voltage 50 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum On-State Resistance 3.5 Ω @ VGS = 10 V, 6.0 Ω @ VGS = 4.5 V Ω
Maximum Gate Threshold Voltage 1.5 V V
Minimum Gate Threshold Voltage 0.8 V V
Maximum Power Dissipation 360 mW mW
Maximum Gate-Source Voltage -20 V, +20 V V
Maximum Operating Temperature +150 °C °C
Minimum Operating Temperature -55 °C °C

Key Features

  • Low on-state resistance: 3.5 Ω at VGS = 10 V and 6.0 Ω at VGS = 4.5 V, achieved through high-density cell design.
  • Rugged and reliable performance, ensuring operation in various operating conditions.
  • Compact industry-standard SOT-23 surface-mount package.
  • Pb-free and Halogen-free, aligning with current environmental standards.
  • Fast switching performance, suitable for low voltage, low current applications.

Applications

  • Small servo motor control.
  • Power MOSFET gate drivers.
  • Other switching applications.

Q & A

  1. What is the BSS138? The BSS138 is an N-Channel enhancement mode Field Effect Transistor (FET) produced by onsemi.
  2. What technology is used in the BSS138? The BSS138 is produced using onsemi's proprietary, high cell density, DMOS technology.
  3. What is the maximum drain-source voltage of the BSS138? The maximum drain-source voltage is 50 V.
  4. What is the maximum continuous drain current of the BSS138? The maximum continuous drain current is 220 mA.
  5. What package type does the BSS138 use? The BSS138 uses a compact industry-standard SOT-23 surface-mount package.
  6. Is the BSS138 environmentally friendly? Yes, the BSS138 is Pb-free and Halogen-free.
  7. What are some typical applications of the BSS138? Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.
  8. What is the on-state resistance of the BSS138? The on-state resistance is 3.5 Ω at VGS = 10 V and 6.0 Ω at VGS = 4.5 V.
  9. What is the maximum operating temperature of the BSS138? The maximum operating temperature is +150 °C.
  10. What is the minimum operating temperature of the BSS138? The minimum operating temperature is -55 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:27 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS138_L99Z
BSS138_L99Z
MOSFET N-CH 50V 220MA SOT23-3

Similar Products

Part Number BSS138 BSS138L BSS138W BSS138K
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 220mA (Ta) 200mA (Ta) 210mA (Ta) 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.75V, 5V 4.5V, 10V 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 200mA, 5V 3.5Ohm @ 220mA, 10V 1.6Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 1mA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V 2.4 nC @ 10 V 1.1 nC @ 10 V 2.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 27 pF @ 25 V 50 pF @ 25 V 38 pF @ 25 V 58 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 360mW (Ta) 350mW (Ta) 340mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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