BSS138_L99Z
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onsemi BSS138_L99Z

Manufacturer No:
BSS138_L99Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 220MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSS138_L99Z is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is designed using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 50 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current ID 0.22 A
Pulsed Drain Current IDM 0.88 A
Maximum Power Dissipation PD 0.36 W
Thermal Resistance, Junction to Ambient RθJA 350 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
On-State Resistance RDS(on) 3.5 Ω @ VGS = 10 V Ω
Turn-On Delay Time td(on) 2.5 ns ns
Turn-Off Delay Time td(off) 20 ns ns

Key Features

  • Advanced MOSFET process technology for high cell density and low on-resistance.
  • Ideal for high efficiency switched mode power supplies.
  • Low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • Rugged and reliable performance.
  • Compact industry standard SOT-23 surface mount package.

Applications

  • Small servo motor control.
  • Power MOSFET gate drivers.
  • Switching applications in general.
  • High efficiency switch mode power supplies.
  • Other low voltage, low current applications.

Q & A

  1. What is the maximum drain-source voltage of the BSS138_L99Z?

    The maximum drain-source voltage is 50 V.

  2. What is the continuous drain current rating of the BSS138_L99Z?

    The continuous drain current rating is 0.22 A.

  3. What is the maximum gate-source voltage for the BSS138_L99Z?

    The maximum gate-source voltage is ±20 V.

  4. What is the typical on-state resistance of the BSS138_L99Z at VGS = 10 V?

    The typical on-state resistance is 3.5 Ω at VGS = 10 V.

  5. What is the thermal resistance, junction to ambient, for the BSS138_L99Z?

    The thermal resistance, junction to ambient, is 350 °C/W.

  6. What is the operating and storage temperature range for the BSS138_L99Z?

    The operating and storage temperature range is -55 to +150 °C.

  7. What package type is the BSS138_L99Z available in?

    The BSS138_L99Z is available in a SOT-23 surface mount package.

  8. What are some typical applications for the BSS138_L99Z?

    Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications.

  9. What are the key features of the BSS138_L99Z?

    The key features include advanced MOSFET process technology, low on-resistance, fast switching, and rugged and reliable performance.

  10. How does the BSS138_L99Z perform in terms of switching speed?

    The BSS138_L99Z has fast switching characteristics with a turn-on delay time of 2.5 ns and a turn-off delay time of 20 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:27 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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BSS138_L99Z
BSS138_L99Z
MOSFET N-CH 50V 220MA SOT23-3

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