6HP04CH-TL-W
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onsemi 6HP04CH-TL-W

Manufacturer No:
6HP04CH-TL-W
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 370MA 3CPH
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The 6HP04CH-TL-W is a P-channel small single MOSFET produced by onsemi. This surface-mount device is part of the CPH-3 package family and is designed for various electronic applications requiring low power consumption and high reliability. The MOSFET is known for its compact size and robust performance, making it suitable for a wide range of uses in modern electronics.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Continuous Drain Current (Id)370 mA (at Ta)
On-Resistance (Rds(on))4.2 Ω @ 10 V, 190 mA
Power Dissipation (Pd)600 mW
Gate Threshold Voltage (Vgs(th))1.2 V
Gate Charge (Qg)840 pC
Operating Temperature Range-55°C to +150°C

Key Features

  • P-channel MOSFET with a compact CPH-3 surface-mount package.
  • Low on-resistance (Rds(on)) of 4.2 Ω at 10 V and 190 mA.
  • High voltage rating of 60 V and continuous drain current of 370 mA.
  • Low power dissipation of 600 mW.
  • Wide operating temperature range from -55°C to +150°C.
  • ROHS compliant.

Applications

The 6HP04CH-TL-W MOSFET is versatile and can be used in various applications, including but not limited to:

  • Power management circuits.
  • Switching and amplification in electronic devices.
  • Automotive systems requiring high reliability and low power consumption.
  • Consumer electronics such as audio equipment and home appliances.
  • Industrial control systems and automation.

Q & A

  1. What is the voltage rating of the 6HP04CH-TL-W MOSFET?
    The voltage rating (Vds) of the 6HP04CH-TL-W MOSFET is 60 V.
  2. What is the continuous drain current of the 6HP04CH-TL-W MOSFET?
    The continuous drain current (Id) of the 6HP04CH-TL-W MOSFET is 370 mA at ambient temperature (Ta).
  3. What is the on-resistance (Rds(on)) of the 6HP04CH-TL-W MOSFET?
    The on-resistance (Rds(on)) of the 6HP04CH-TL-W MOSFET is 4.2 Ω at 10 V and 190 mA.
  4. What is the power dissipation (Pd) of the 6HP04CH-TL-W MOSFET?
    The power dissipation (Pd) of the 6HP04CH-TL-W MOSFET is 600 mW.
  5. What is the gate threshold voltage (Vgs(th)) of the 6HP04CH-TL-W MOSFET?
    The gate threshold voltage (Vgs(th)) of the 6HP04CH-TL-W MOSFET is 1.2 V.
  6. What is the gate charge (Qg) of the 6HP04CH-TL-W MOSFET?
    The gate charge (Qg) of the 6HP04CH-TL-W MOSFET is 840 pC.
  7. What is the operating temperature range of the 6HP04CH-TL-W MOSFET?
    The operating temperature range of the 6HP04CH-TL-W MOSFET is from -55°C to +150°C.
  8. Is the 6HP04CH-TL-W MOSFET ROHS compliant?
    Yes, the 6HP04CH-TL-W MOSFET is ROHS compliant.
  9. What package type does the 6HP04CH-TL-W MOSFET use?
    The 6HP04CH-TL-W MOSFET uses a CPH-3 surface-mount package.
  10. Where can the 6HP04CH-TL-W MOSFET be used?
    The 6HP04CH-TL-W MOSFET can be used in power management circuits, switching and amplification in electronic devices, automotive systems, consumer electronics, and industrial control systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:4.2Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:0.84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24.1 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-CPH
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 6HP04CH-TL-W 6HP04MH-TL-W
Manufacturer onsemi onsemi
Product Status Obsolete Discontinued at Digi-Key
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 370mA (Ta) 370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 4.2Ohm @ 190mA, 10V 4.2Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 0.84 nC @ 10 V 0.84 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24.1 pF @ 20 V 24.1 pF @ 20 V
FET Feature - -
Power Dissipation (Max) - 600mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 3-CPH SC-70FL/MCPH3
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-23-3 Flat Leads

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