English
PSMN8R5-100PSQ
  • Share:

Nexperia USA Inc. PSMN8R5-100PSQ

Manufacturer No:
PSMN8R5-100PSQ
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Description:
MOSFET N-CH 100V 100A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN8R5-100PSQ is a 100V standard level N-channel MOSFET produced by Nexperia USA Inc. This device is part of the NextPower series and is known for its high efficiency, low switching and conduction losses, and robust performance. It is housed in a TO-220AB package and is qualified to operate up to 175°C, making it suitable for a wide range of industrial and consumer applications.

Key Specifications

ParameterValue
Type numberPSMN8R5-100PSQ
PackageTO-220AB (SOT78)
Channel typeN-channel
VDS [max]100 V
RDSon [max] @ VGS = 10 V8.5 mΩ
Tj [max]175 °C
ID [max]100 A
QGD [typ]8.7 nC
QG(tot) [typ] @ VGS = 10 V44.5 nC
Ptot [max]263 W (Tc)
Qr [typ]70 nC
VGS(th) [typ]3.1 V
Ciss [typ]5512 pF @ 50 V

Key Features

  • Optimized for fast switching, low spiking, and high efficiency.
  • Low QGD and Qr for reduced switching losses.
  • Strong avalanche energy rating (EAS) and 100% tested for avalanche rating.
  • Lead-free and RoHS compliant TO-220AB package.
  • Low body diode losses (Qrr) and fast recovery (trr).

Applications

  • Synchronous rectification in AC-to-DC and DC-to-DC applications.
  • Brushed and BLDC motor control.
  • UPS and solar inverter applications.
  • LED lighting.
  • Battery protection.
  • Full-bridge and half-bridge applications.
  • Flyback and resonant topologies.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN8R5-100PSQ?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the maximum on-resistance (RDSon) at VGS = 10 V?
    The maximum on-resistance (RDSon) at VGS = 10 V is 8.5 mΩ.
  3. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 175 °C.
  4. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is 100 A.
  5. Is the PSMN8R5-100PSQ RoHS compliant?
    Yes, the PSMN8R5-100PSQ is lead-free and RoHS compliant.
  6. What are the typical gate charge (QG(tot)) and gate-drain charge (QGD) values?
    The typical gate charge (QG(tot)) is 44.5 nC, and the typical gate-drain charge (QGD) is 8.7 nC.
  7. What are some common applications of the PSMN8R5-100PSQ?
    Common applications include synchronous rectification, motor control, UPS and solar inverters, LED lighting, battery protection, and various power conversion topologies.
  8. What is the package type of the PSMN8R5-100PSQ?
    The package type is TO-220AB (SOT78).
  9. Is the PSMN8R5-100PSQ suitable for high-temperature applications?
    Yes, it is qualified to operate up to 175 °C.
  10. What is the input capacitance (Ciss) at 50 V?
    The input capacitance (Ciss) at 50 V is 5512 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:111 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5512 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.06
223

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN8R5-100PSQ PSMN8R5-100XSQ PSMN8R5-100ESQ
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tj) 49A (Tj) 100A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V 8.5mOhm @ 10A, 10V 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V 100 nC @ 10 V 111 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5512 pF @ 50 V 5512 pF @ 50 V 5512 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 55W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220F I2PAK
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
PMBT3906M,315
PMBT3906M,315
Nexperia USA Inc.
TRANS PNP 40V 0.2A SOT883
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
PCMF3USB30Z
PCMF3USB30Z
Nexperia USA Inc.
CMC 6LN SMD ESD
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A