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PSMN8R5-100PSQ
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Nexperia USA Inc. PSMN8R5-100PSQ

Manufacturer No:
PSMN8R5-100PSQ
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Description:
MOSFET N-CH 100V 100A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The PSMN8R5-100PSQ is a 100V standard level N-channel MOSFET produced by Nexperia USA Inc. This device is part of the NextPower series and is known for its high efficiency, low switching and conduction losses, and robust performance. It is housed in a TO-220AB package and is qualified to operate up to 175°C, making it suitable for a wide range of industrial and consumer applications.

Key Specifications

ParameterValue
Type numberPSMN8R5-100PSQ
PackageTO-220AB (SOT78)
Channel typeN-channel
VDS [max]100 V
RDSon [max] @ VGS = 10 V8.5 mΩ
Tj [max]175 °C
ID [max]100 A
QGD [typ]8.7 nC
QG(tot) [typ] @ VGS = 10 V44.5 nC
Ptot [max]263 W (Tc)
Qr [typ]70 nC
VGS(th) [typ]3.1 V
Ciss [typ]5512 pF @ 50 V

Key Features

  • Optimized for fast switching, low spiking, and high efficiency.
  • Low QGD and Qr for reduced switching losses.
  • Strong avalanche energy rating (EAS) and 100% tested for avalanche rating.
  • Lead-free and RoHS compliant TO-220AB package.
  • Low body diode losses (Qrr) and fast recovery (trr).

Applications

  • Synchronous rectification in AC-to-DC and DC-to-DC applications.
  • Brushed and BLDC motor control.
  • UPS and solar inverter applications.
  • LED lighting.
  • Battery protection.
  • Full-bridge and half-bridge applications.
  • Flyback and resonant topologies.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN8R5-100PSQ?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the maximum on-resistance (RDSon) at VGS = 10 V?
    The maximum on-resistance (RDSon) at VGS = 10 V is 8.5 mΩ.
  3. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 175 °C.
  4. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is 100 A.
  5. Is the PSMN8R5-100PSQ RoHS compliant?
    Yes, the PSMN8R5-100PSQ is lead-free and RoHS compliant.
  6. What are the typical gate charge (QG(tot)) and gate-drain charge (QGD) values?
    The typical gate charge (QG(tot)) is 44.5 nC, and the typical gate-drain charge (QGD) is 8.7 nC.
  7. What are some common applications of the PSMN8R5-100PSQ?
    Common applications include synchronous rectification, motor control, UPS and solar inverters, LED lighting, battery protection, and various power conversion topologies.
  8. What is the package type of the PSMN8R5-100PSQ?
    The package type is TO-220AB (SOT78).
  9. Is the PSMN8R5-100PSQ suitable for high-temperature applications?
    Yes, it is qualified to operate up to 175 °C.
  10. What is the input capacitance (Ciss) at 50 V?
    The input capacitance (Ciss) at 50 V is 5512 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:111 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5512 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN8R5-100PSQ PSMN8R5-100XSQ PSMN8R5-100ESQ
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tj) 49A (Tj) 100A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V 8.5mOhm @ 10A, 10V 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V 100 nC @ 10 V 111 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5512 pF @ 50 V 5512 pF @ 50 V 5512 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 55W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220F I2PAK
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-262-3 Long Leads, I²Pak, TO-262AA

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