PSMN8R5-100XSQ
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NXP USA Inc. PSMN8R5-100XSQ

Manufacturer No:
PSMN8R5-100XSQ
Manufacturer:
NXP USA Inc.
Package:
Tube
Description:
MOSFET N-CH 100V 49A TO220F
Delivery:
Payment:
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Product Introduction

Overview

The PSMN8R5-100XSQ is a high-performance N-channel MOSFET produced by NXP USA Inc. This component is part of the NextPower series, known for its enhanced switching capabilities and high efficiency. The MOSFET is packaged in a TO-220-3 case, making it suitable for a variety of industrial and consumer applications. It is optimized for fast switching, low spiking, and high efficiency, making it an ideal choice for demanding power management tasks.

Key Specifications

ParameterValue
Channel TypeN-Channel
PackageTO-220-3 (SOT78)
Number of Pins3 Pins
Continuous Drain Current (Id)100 A @ 25°C
Pulsed Drain Current (Idm)429 A
Drain-Source On Resistance (Rds On)8.5 mΩ @ 25 A, 10 V
Gate-Source Threshold Voltage (Vgs(th))4 V @ 1 mA
Maximum Drain-Source Voltage (Vds)100 V
Maximum Gate-Source Voltage (Vgs)±20 V
Operating Temperature (Tj)-55°C to 175°C
Power Dissipation (Ptot)263 W
Turn On Delay Time20 ns
Turn Off Delay Time87 ns
Rise Time35 ns
Fall Time43 ns (Typ)
Gate Charge (Qg)111 nC @ 10 V
Input Capacitance (Ciss)5512 pF @ 50 V
RoHS StatusRoHS3 Compliant

Key Features

  • Optimized for fast switching, low spiking, and high efficiency.
  • Low Qg and Rds On FOM for high efficiency switching applications.
  • Low body diode losses (Qrr) and fast recovery (trr).
  • Strong avalanche energy rating (EAS) and 100% tested.
  • Halogen-free and RoHS compliant TO220 package.
  • Enhancement mode operation with built-in diode.

Applications

  • Synchronous rectification in AC-to-DC and DC-to-DC applications.
  • Brushed and BLDC motor control.
  • UPS and solar inverter applications.
  • LED lighting.
  • Battery protection.
  • Full-bridge and half-bridge applications.
  • Flyback and resonant topologies.

Q & A

  1. What is the continuous drain current of the PSMN8R5-100XSQ?
    The continuous drain current is 100 A at 25°C.
  2. What is the maximum drain-source voltage?
    The maximum drain-source voltage is 100 V.
  3. What is the typical turn-on delay time?
    The typical turn-on delay time is 20 ns.
  4. What is the typical turn-off delay time?
    The typical turn-off delay time is 87 ns.
  5. Is the PSMN8R5-100XSQ RoHS compliant?
    Yes, it is RoHS3 compliant.
  6. What is the operating temperature range?
    The operating temperature range is -55°C to 175°C.
  7. What are the key applications of this MOSFET?
    Key applications include synchronous rectification, motor control, UPS and solar inverters, LED lighting, battery protection, and various bridge and resonant topologies.
  8. What is the package type of the PSMN8R5-100XSQ?
    The package type is TO-220-3 (SOT78).
  9. What is the maximum power dissipation?
    The maximum power dissipation is 263 W.
  10. Is the component halogen-free?
    Yes, it is halogen-free.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:49A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5512 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number PSMN8R5-100XSQ PSMN8R5-100ESQ PSMN8R5-100PSQ
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 49A (Tj) 100A (Tj) 100A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V 8.5mOhm @ 25A, 10V 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 111 nC @ 10 V 111 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5512 pF @ 50 V 5512 pF @ 50 V 5512 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 55W (Tc) 263W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220F I2PAK TO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3

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