PSMN1R0-30YLC,115
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Nexperia USA Inc. PSMN1R0-30YLC,115

Manufacturer No:
PSMN1R0-30YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The PSMN1R0-30YLC,115 is a logic level enhancement mode N-channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's NextPower technology series and is packaged in the LFPAK56 (SOT669) package. It is designed for use in a wide range of industrial, communications, and other applications where high efficiency and reliability are crucial.

Key Specifications

ParameterValue
Type NumberPSMN1R0-30YLC
PackageLFPAK56; Power-SO8 (SOT669)
Channel TypeN-channel
VDS [max]30 V
RDSon [max] @ VGS = 10 V1.15 mΩ
RDSon [max] @ VGS = 4.5 V; @25°C1.4 mΩ
Tj [max]175°C
ID [max]100 A
QGD [typ]14.6 nC
QG(tot) [typ] @ VGS = 4.5 V50 nC
QG(tot) [typ] @ VGS = 10 V103.5 nC
Ptot [max]272 W
Qr [typ]67 nC
VGSth [typ]1.41 V
Automotive QualifiedNo
Ciss [typ]6645 pF
Coss [typ]1210 pF
Release Date2011-02-25

Key Features

  • Logic level enhancement mode N-channel MOSFET for low threshold voltage operation.
  • Low on-resistance (RDSon) of 1.15 mΩ at VGS = 10 V and 1.4 mΩ at VGS = 4.5 V.
  • High current capability of up to 100 A.
  • Maximum junction temperature of 175°C.
  • LFPAK56 (SOT669) package for high power density and thermal performance.
  • NextPower technology for enhanced efficiency and reliability.

Applications

The PSMN1R0-30YLC,115 is suitable for a variety of applications, including:

  • Industrial power management and control systems.
  • Communications equipment.
  • Automotive systems (though not automotive qualified).
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Load switching and general-purpose switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN1R0-30YLC,115?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the on-resistance (RDSon) at VGS = 10 V?
    The on-resistance (RDSon) at VGS = 10 V is 1.15 mΩ.
  3. What is the maximum current (ID) rating of this MOSFET?
    The maximum current (ID) rating is 100 A.
  4. In what package is the PSMN1R0-30YLC,115 available?
    The PSMN1R0-30YLC,115 is available in the LFPAK56 (SOT669) package.
  5. Is the PSMN1R0-30YLC,115 automotive qualified?
    No, the PSMN1R0-30YLC,115 is not automotive qualified.
  6. What is the typical threshold voltage (VGSth) of this MOSFET?
    The typical threshold voltage (VGSth) is 1.41 V.
  7. What is the maximum junction temperature (Tj) of this component?
    The maximum junction temperature (Tj) is 175°C.
  8. What technology is used in the PSMN1R0-30YLC,115?
    The PSMN1R0-30YLC,115 uses Nexperia's NextPower technology.
  9. Where can I find detailed specifications and datasheets for the PSMN1R0-30YLC,115?
    Detailed specifications and datasheets can be found on Nexperia's official website, as well as on distributor websites like Digi-Key and Mouser.
  10. What are some common applications for the PSMN1R0-30YLC,115?
    Common applications include industrial power management, communications equipment, power supplies, DC-DC converters, motor control, and load switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:103.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6645 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):272W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN1R0-30YLC,115 PSMN1R5-30YLC,115 PSMN1R2-30YLC,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.15mOhm @ 25A, 10V 1.55mOhm @ 25A, 10V 1.25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103.5 nC @ 10 V 65 nC @ 10 V 78 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6645 pF @ 15 V 4044 pF @ 15 V 5093 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 272W (Tc) 179W (Tc) 215W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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