Overview
The PSMN1R5-30YLC,115 is a logic level enhancement mode N-channel MOSFET produced by Nexperia USA Inc. This component is housed in the LFPAK56 (Power-SO8) package and is designed for use in a wide range of industrial, communications, and other applications. It is known for its high efficiency and reliability, making it a versatile choice for various electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PSMN1R5-30YLC | - |
| Package | LFPAK56; Power-SO8 (SOT669) | - |
| Channel Type | N-channel | - |
| VDS [max] | 30 | V |
| RDSon [max] @ VGS = 10 V | 1.55 | mΩ |
| RDSon [max] @ VGS = 4.5 V; @25 °C | 1.9 | mΩ |
| Tj [max] | 175 | °C |
| ID [max] | 100 | A |
| QGD [typ] | 8.7 | nC |
| QG(tot) [typ] @ VGS = 4.5 V | 36.2 | nC |
| QG(tot) [typ] @ VGS = 10 V | 77.9 | nC |
| Ptot [max] | 109 | W |
| Qr [typ] | 56 | nC |
| VGSth [typ] | 1.7 | V |
| Automotive Qualified | No | - |
| Ciss [typ] | 5057 | pF |
| Coss [typ] | 1082 | pF |
Key Features
- High Efficiency: The PSMN1R5-30YLC,115 features a low on-resistance (RDSon) of 1.55 mΩ at VGS = 10 V, making it highly efficient for power management applications.
- High Temperature Capability: Qualified to operate up to a junction temperature of 175 °C, this MOSFET is suitable for demanding environments.
- Logic Level Operation: Designed for logic level operation, this MOSFET can be driven directly by microcontrollers and other logic circuits.
- Compact Packaging: The LFPAK56 (Power-SO8) package offers a compact footprint while maintaining high power handling capabilities.
Applications
- Industrial Applications: Suitable for use in industrial control systems, motor drives, and power supplies.
- Communications: Used in various communication equipment and infrastructure due to its high reliability and efficiency.
- Automotive and Power Systems: Although not automotive qualified, it can be used in non-automotive power systems such as DC-DC converters and power management circuits.
- Consumer and Mobile Devices: Applicable in consumer electronics and mobile devices where high efficiency and compact design are crucial.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN1R5-30YLC,115?
The maximum drain-source voltage (VDS) is 30 V.
- What is the on-resistance (RDSon) at VGS = 10 V?
The on-resistance (RDSon) at VGS = 10 V is 1.55 mΩ.
- What is the maximum junction temperature (Tj) for this MOSFET?
The maximum junction temperature (Tj) is 175 °C.
- Is the PSMN1R5-30YLC,115 automotive qualified?
No, the PSMN1R5-30YLC,115 is not automotive qualified.
- What is the package type of the PSMN1R5-30YLC,115?
The package type is LFPAK56 (Power-SO8).
- What is the maximum drain current (ID) for this MOSFET?
The maximum drain current (ID) is 100 A.
- Can the PSMN1R5-30YLC,115 be driven directly by a microcontroller?
Yes, it is designed for logic level operation and can be driven directly by microcontrollers and other logic circuits.
- What are some common applications of the PSMN1R5-30YLC,115?
Common applications include industrial control systems, communications equipment, power supplies, and consumer electronics.
- What is the typical gate-source threshold voltage (VGSth)?
The typical gate-source threshold voltage (VGSth) is 1.7 V.
- Where can I find detailed datasheets and models for the PSMN1R5-30YLC,115?
Detailed datasheets and models can be found on the Nexperia website and through distributors like Digi-Key and Mouser.
