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PSMN1R2-30YLC,115
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Nexperia USA Inc. PSMN1R2-30YLC,115

Manufacturer No:
PSMN1R2-30YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The PSMN1R2-30YLC,115 is a logic level enhancement mode N-channel MOSFET produced by Nexperia USA Inc. This device is packaged in the LFPAK (Leadless Flat Package) which offers a compact and thermally efficient design. It is designed and qualified for use in a wide range of industrial, communications, and consumer applications, making it a versatile component for various electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
RDS(on) (On-Resistance)1.25 mΩ
ID (Continuous Drain Current)100 A
VGS(th) (Threshold Voltage)0.5 - 1.5 V
Ptot (Total Power Dissipation)200 W
TJ (Junction Temperature)-55 to 150 °C
PackageLFPAK (Leadless Flat Package)

Key Features

  • Logic level enhancement mode N-channel MOSFET
  • Compact LFPAK package for improved thermal performance
  • Low on-resistance (RDS(on)) of 1.25 mΩ
  • High continuous drain current (ID) of 100 A
  • Wide junction temperature range (-55 to 150 °C)
  • Qualified for use in industrial, communications, and consumer applications

Applications

  • Industrial automation and control systems
  • Communications equipment
  • Consumer electronics
  • Power management and switching applications
  • Automotive systems (where applicable)

Q & A

  1. What is the maximum drain-source voltage of the PSMN1R2-30YLC,115?
    The maximum drain-source voltage is 30 V.
  2. What is the on-resistance of the PSMN1R2-30YLC,115?
    The on-resistance (RDS(on)) is 1.25 mΩ.
  3. What is the continuous drain current of the PSMN1R2-30YLC,115?
    The continuous drain current (ID) is 100 A.
  4. What is the threshold voltage range of the PSMN1R2-30YLC,115?
    The threshold voltage (VGS(th)) range is 0.5 - 1.5 V.
  5. What is the total power dissipation of the PSMN1R2-30YLC,115?
    The total power dissipation (Ptot) is 200 W.
  6. What is the junction temperature range of the PSMN1R2-30YLC,115?
    The junction temperature range is -55 to 150 °C.
  7. What package type is used for the PSMN1R2-30YLC,115?
    The device is packaged in the LFPAK (Leadless Flat Package).
  8. What are some common applications for the PSMN1R2-30YLC,115?
    Common applications include industrial automation, communications equipment, consumer electronics, and power management systems.
  9. Is the PSMN1R2-30YLC,115 suitable for automotive applications?
    While it can be used in various applications, it is essential to check the specific requirements and qualifications for automotive use.
  10. Where can I find detailed specifications for the PSMN1R2-30YLC,115?
    Detailed specifications can be found in the datasheet available on Nexperia's official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.25mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5093 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):215W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN1R2-30YLC,115 PSMN2R2-30YLC,115 PSMN1R5-30YLC,115 PSMN3R2-30YLC,115 PSMN1R0-30YLC,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.25mOhm @ 25A, 10V 2.15mOhm @ 25A, 10V 1.55mOhm @ 25A, 10V 3.5mOhm @ 25A, 10V 1.15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V 55 nC @ 10 V 65 nC @ 10 V 29.5 nC @ 10 V 103.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5093 pF @ 15 V 3310 pF @ 15 V 4044 pF @ 15 V 2081 pF @ 15 V 6645 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 215W (Tc) 141W (Tc) 179W (Tc) 92W (Tc) 272W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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