PMV65XPEAR
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Nexperia USA Inc. PMV65XPEAR

Manufacturer No:
PMV65XPEAR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The PMV65XPEAR is a P-Channel MOSFET produced by Nexperia USA Inc. This surface-mount device is housed in the TO-236AB (SOT23) package and is designed for a variety of applications requiring low power consumption and high efficiency. The MOSFET is known for its compact size and robust performance, making it suitable for use in modern electronic designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Continuous Drain Current at Ta)2.8 A
PTOT (Total Power Dissipation at Ta)480 mW
PTOT (Total Power Dissipation at Tc)6.25 W
VGS(th) (Threshold Voltage)-0.8 to -3.5 V
RDS(on) (On-State Drain-Source Resistance)Typically 50 mΩ
PackageTO-236AB (SOT23)

Key Features

  • Compact TO-236AB (SOT23) surface-mount package
  • Low on-state resistance (RDS(on)) of typically 50 mΩ
  • High continuous drain current (ID) of 2.8 A at Ta
  • Low total power dissipation of 480 mW at Ta and 6.25 W at Tc
  • Threshold voltage (VGS(th)) range of -0.8 to -3.5 V

Applications

The PMV65XPEAR MOSFET is suitable for a wide range of applications, including but not limited to:

  • Power management in portable electronics
  • DC-DC converters and power supplies
  • Motor control and drive circuits
  • Audio and video equipment
  • General-purpose switching applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV65XPEAR MOSFET?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the continuous drain current (ID) at ambient temperature (Ta)?
    The continuous drain current (ID) at Ta is 2.8 A.
  3. What is the total power dissipation at ambient temperature (Ta) and case temperature (Tc)?
    The total power dissipation is 480 mW at Ta and 6.25 W at Tc.
  4. What is the typical on-state drain-source resistance (RDS(on))?
    The typical on-state drain-source resistance (RDS(on)) is 50 mΩ.
  5. What is the package type of the PMV65XPEAR MOSFET?
    The package type is TO-236AB (SOT23).
  6. What is the threshold voltage (VGS(th)) range of the PMV65XPEAR MOSFET?
    The threshold voltage (VGS(th)) range is -0.8 to -3.5 V.
  7. What are some common applications of the PMV65XPEAR MOSFET?
    Common applications include power management in portable electronics, DC-DC converters, motor control, audio and video equipment, and general-purpose switching.
  8. Where can I find detailed specifications and datasheets for the PMV65XPEAR MOSFET?
    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Heisener.
  9. Is the PMV65XPEAR MOSFET suitable for high-power applications?
    No, the PMV65XPEAR is designed for low to medium power applications due to its power dissipation limits.
  10. What is the significance of the TO-236AB (SOT23) package?
    The TO-236AB (SOT23) package is a compact surface-mount package that allows for efficient use of space in modern electronic designs.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:618 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV65XPEAR PMV65XPER
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 78mOhm @ 2.8A, 4.5V 78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 9 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 618 pF @ 10 V 618 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta), 6.25W (Tc) 480mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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