PMV65XPER
  • Share:

Nexperia USA Inc. PMV65XPER

Manufacturer No:
PMV65XPER
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XP, also referred to as PMV65XPER, is a 20 V single P-channel Trench MOSFET produced by Nexperia USA Inc. This Field-Effect Transistor (FET) is designed in an enhancement mode and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The PMV65XP leverages Trench MOSFET technology, offering low threshold voltage and low on-state resistance, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Type number PMV65XP -
Package SOT23 (TO-236AB) -
Channel type P-channel -
Number of transistors 1 -
VDS [max] -20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 74
RDSon [max] @ VGS = 2.5 V 92
Tj [max] 150 °C
ID [max] -4.3 A
QGD [typ] 1.65 nC
QG(tot) [typ] @ VGS = 4.5 V 7.7 nC
Ptot [max] 0.48 W
VGSth [typ] -0.65 V
Automotive qualified No -
Ciss [typ] 744 pF
Coss [typ] 65 pF

Key Features

  • Trench MOSFET Technology: Offers enhanced performance with low on-state resistance and high efficiency.
  • Low Threshold Voltage: Ensures easy switching and low power consumption.
  • Small SOT23 Package: Compact design suitable for space-constrained applications.
  • High Temperature Rating: Maximum junction temperature of 150°C, ensuring reliability in demanding environments.
  • Low Power DC-to-DC Converters: Ideal for use in low power DC-to-DC conversion applications.

Applications

  • Low Power DC-to-DC Converters: Suitable for efficient power conversion in low power systems.
  • Load Switching: Used in load switching applications where high efficiency and reliability are crucial.
  • Battery Management: Ideal for battery management systems in portable and mobile devices.
  • Battery Powered Portable Equipment: Used in various battery-powered devices requiring efficient power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV65XP?

    The maximum drain-source voltage (VDS) is -20 V.

  2. What is the package type of the PMV65XP?

    The PMV65XP is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. What is the typical threshold voltage (VGSth) of the PMV65XP?

    The typical threshold voltage (VGSth) is -0.65 V.

  4. What is the maximum on-state resistance (RDSon) at VGS = 4.5 V?

    The maximum on-state resistance (RDSon) at VGS = 4.5 V is 74 mΩ.

  5. What is the maximum junction temperature (Tj) of the PMV65XP?

    The maximum junction temperature (Tj) is 150°C.

  6. Is the PMV65XP automotive qualified?

    No, the PMV65XP is not automotive qualified.

  7. What are some typical applications of the PMV65XP?

    Typical applications include low power DC-to-DC converters, load switching, battery management, and battery-powered portable equipment.

  8. What technology does the PMV65XP use?

    The PMV65XP uses Trench MOSFET technology.

  9. What is the maximum drain current (ID) of the PMV65XP?

    The maximum drain current (ID) is -4.3 A.

  10. What is the typical gate-drain charge (QGD) of the PMV65XP?

    The typical gate-drain charge (QGD) is 1.65 nC.

  11. Where can I find more detailed specifications and application notes for the PMV65XP?

    You can find detailed specifications and application notes on Nexperia's official website and other authorized distributors like Digi-Key and Mouser.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:618 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.43
1,360

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMV65XPER PMV65XPEAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 78mOhm @ 2.8A, 4.5V 78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 9 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 618 pF @ 10 V 618 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta), 6.25W (Tc) 480mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4

Related Product By Brand

BZA462A,125
BZA462A,125
Nexperia USA Inc.
TVS DIODE 6.2VWM 9VC 6TSOP
PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP