PMV65XPER
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Nexperia USA Inc. PMV65XPER

Manufacturer No:
PMV65XPER
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XP, also referred to as PMV65XPER, is a 20 V single P-channel Trench MOSFET produced by Nexperia USA Inc. This Field-Effect Transistor (FET) is designed in an enhancement mode and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The PMV65XP leverages Trench MOSFET technology, offering low threshold voltage and low on-state resistance, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Type number PMV65XP -
Package SOT23 (TO-236AB) -
Channel type P-channel -
Number of transistors 1 -
VDS [max] -20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 74
RDSon [max] @ VGS = 2.5 V 92
Tj [max] 150 °C
ID [max] -4.3 A
QGD [typ] 1.65 nC
QG(tot) [typ] @ VGS = 4.5 V 7.7 nC
Ptot [max] 0.48 W
VGSth [typ] -0.65 V
Automotive qualified No -
Ciss [typ] 744 pF
Coss [typ] 65 pF

Key Features

  • Trench MOSFET Technology: Offers enhanced performance with low on-state resistance and high efficiency.
  • Low Threshold Voltage: Ensures easy switching and low power consumption.
  • Small SOT23 Package: Compact design suitable for space-constrained applications.
  • High Temperature Rating: Maximum junction temperature of 150°C, ensuring reliability in demanding environments.
  • Low Power DC-to-DC Converters: Ideal for use in low power DC-to-DC conversion applications.

Applications

  • Low Power DC-to-DC Converters: Suitable for efficient power conversion in low power systems.
  • Load Switching: Used in load switching applications where high efficiency and reliability are crucial.
  • Battery Management: Ideal for battery management systems in portable and mobile devices.
  • Battery Powered Portable Equipment: Used in various battery-powered devices requiring efficient power management.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV65XP?

    The maximum drain-source voltage (VDS) is -20 V.

  2. What is the package type of the PMV65XP?

    The PMV65XP is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  3. What is the typical threshold voltage (VGSth) of the PMV65XP?

    The typical threshold voltage (VGSth) is -0.65 V.

  4. What is the maximum on-state resistance (RDSon) at VGS = 4.5 V?

    The maximum on-state resistance (RDSon) at VGS = 4.5 V is 74 mΩ.

  5. What is the maximum junction temperature (Tj) of the PMV65XP?

    The maximum junction temperature (Tj) is 150°C.

  6. Is the PMV65XP automotive qualified?

    No, the PMV65XP is not automotive qualified.

  7. What are some typical applications of the PMV65XP?

    Typical applications include low power DC-to-DC converters, load switching, battery management, and battery-powered portable equipment.

  8. What technology does the PMV65XP use?

    The PMV65XP uses Trench MOSFET technology.

  9. What is the maximum drain current (ID) of the PMV65XP?

    The maximum drain current (ID) is -4.3 A.

  10. What is the typical gate-drain charge (QGD) of the PMV65XP?

    The typical gate-drain charge (QGD) is 1.65 nC.

  11. Where can I find more detailed specifications and application notes for the PMV65XP?

    You can find detailed specifications and application notes on Nexperia's official website and other authorized distributors like Digi-Key and Mouser.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:618 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV65XPER PMV65XPEAR
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 78mOhm @ 2.8A, 4.5V 78mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 9 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 618 pF @ 10 V 618 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta), 6.25W (Tc) 480mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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