PMN55ENEX
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Nexperia USA Inc. PMN55ENEX

Manufacturer No:
PMN55ENEX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMN55ENEX is an N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS™ family, known for its high efficiency and reliability. The PMN55ENEX is designed for a variety of applications requiring high current handling and low on-state resistance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Drain Current)4.5 A (Ta), 6.25 W (Tc)
PD (Power Dissipation)560 mW (Ta)
Package TypeSurface Mount 6-TSOP

Key Features

  • High drain current of 4.5 A at ambient temperature (Ta) and 6.25 W at case temperature (Tc)
  • Low on-state resistance for efficient power handling
  • TrenchMOS™ technology for enhanced performance and reliability
  • Compact 6-TSOP surface mount package for space-saving designs

Applications

The PMN55ENEX is suitable for various applications including but not limited to:

  • Power switching and power management systems
  • Motor control and drive circuits
  • DC-DC converters and power supplies
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the PMN55ENEX?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the maximum drain current of the PMN55ENEX?
    The maximum drain current (ID) is 4.5 A at ambient temperature (Ta).
  3. What is the power dissipation of the PMN55ENEX?
    The power dissipation (PD) is 560 mW at ambient temperature (Ta).
  4. What package type does the PMN55ENEX use?
    The PMN55ENEX uses a surface mount 6-TSOP package.
  5. What technology is used in the PMN55ENEX?
    The PMN55ENEX uses TrenchMOS™ technology.
  6. What are some common applications for the PMN55ENEX?
    Common applications include power switching, motor control, DC-DC converters, and automotive and industrial control systems.
  7. Is the PMN55ENEX suitable for high-current applications?
    Yes, the PMN55ENEX is designed to handle high current and is suitable for high-current applications.
  8. What is the thermal power dissipation at case temperature?
    The thermal power dissipation at case temperature (Tc) is 6.25 W.
  9. Is the PMN55ENEX available in stock?
    Availability can vary; check with the supplier for current stock status.
  10. Where can I find more detailed specifications for the PMN55ENEX?
    More detailed specifications can be found on the official Nexperia website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):560mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
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Similar Products

Part Number PMN55ENEX PMN25ENEX PMN55ENEAX PMN55ENEH
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 6.1A (Ta) 3.6A (Ta) 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V 24mOhm @ 6.1A, 10V 60mOhm @ 3.6A, 10V 60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA 2.7V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 18 nC @ 10 V 13.2 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 30 V 597 pF @ 15 V 450 pF @ 30 V 646 pF @ 30 V
FET Feature - - - -
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc) 560mW (Ta), 6.25mW (Tc) 667mW (Ta), 7.5W (Tc) 560mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457

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