PMN55ENEX
  • Share:

Nexperia USA Inc. PMN55ENEX

Manufacturer No:
PMN55ENEX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMN55ENEX is an N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS™ family, known for its high efficiency and reliability. The PMN55ENEX is designed for a variety of applications requiring high current handling and low on-state resistance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
ID (Drain Current)4.5 A (Ta), 6.25 W (Tc)
PD (Power Dissipation)560 mW (Ta)
Package TypeSurface Mount 6-TSOP

Key Features

  • High drain current of 4.5 A at ambient temperature (Ta) and 6.25 W at case temperature (Tc)
  • Low on-state resistance for efficient power handling
  • TrenchMOS™ technology for enhanced performance and reliability
  • Compact 6-TSOP surface mount package for space-saving designs

Applications

The PMN55ENEX is suitable for various applications including but not limited to:

  • Power switching and power management systems
  • Motor control and drive circuits
  • DC-DC converters and power supplies
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the PMN55ENEX?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the maximum drain current of the PMN55ENEX?
    The maximum drain current (ID) is 4.5 A at ambient temperature (Ta).
  3. What is the power dissipation of the PMN55ENEX?
    The power dissipation (PD) is 560 mW at ambient temperature (Ta).
  4. What package type does the PMN55ENEX use?
    The PMN55ENEX uses a surface mount 6-TSOP package.
  5. What technology is used in the PMN55ENEX?
    The PMN55ENEX uses TrenchMOS™ technology.
  6. What are some common applications for the PMN55ENEX?
    Common applications include power switching, motor control, DC-DC converters, and automotive and industrial control systems.
  7. Is the PMN55ENEX suitable for high-current applications?
    Yes, the PMN55ENEX is designed to handle high current and is suitable for high-current applications.
  8. What is the thermal power dissipation at case temperature?
    The thermal power dissipation at case temperature (Tc) is 6.25 W.
  9. Is the PMN55ENEX available in stock?
    Availability can vary; check with the supplier for current stock status.
  10. Where can I find more detailed specifications for the PMN55ENEX?
    More detailed specifications can be found on the official Nexperia website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):560mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
0 Remaining View Similar

In Stock

$0.53
556

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMN55ENEX PMN25ENEX PMN55ENEAX PMN55ENEH
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 30 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 6.1A (Ta) 3.6A (Ta) 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V 24mOhm @ 6.1A, 10V 60mOhm @ 3.6A, 10V 60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.5V @ 250µA 2.7V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 18 nC @ 10 V 13.2 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 30 V 597 pF @ 15 V 450 pF @ 30 V 646 pF @ 30 V
FET Feature - - - -
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc) 560mW (Ta), 6.25mW (Tc) 667mW (Ta), 7.5W (Tc) 560mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BCP52-16,115
BCP52-16,115
Nexperia USA Inc.
TRANS PNP 60V 1A SOT223
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HCT273D-Q100J
74HCT273D-Q100J
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SO
74LVC3G04DP,125
74LVC3G04DP,125
Nexperia USA Inc.
IC INVERTER 3CH 3-INP 8TSSOP
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER