PMN55ENEH
  • Share:

Nexperia USA Inc. PMN55ENEH

Manufacturer No:
PMN55ENEH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMN55ENEH is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS™ family, known for its advanced technology and reliability. The PMN55ENEH is designed for a wide range of applications requiring high efficiency, low power consumption, and robust performance.

With a drain to source voltage (Vdss) of 60V and a continuous drain current (Id) of 4.5A at 25°C, this MOSFET is suitable for various power management and switching applications. The device features a low on-resistance (Rds(on)) of 60mΩ at 3.4A and 10V, making it an excellent choice for minimizing power losses and enhancing overall system efficiency.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number PMN55ENEH
FET Type N-Channel MOSFET
Package / Case SC-74, SOT-457
Drain to Source Voltage (Vdss) 60V
Gate to Source Voltage (Vgs) Max ±20V
Continuous Drain Current (Id) @ 25°C 4.5A
On-Resistance (Rds(on)) Max @ Id, Vgs 60mΩ @ 3.4A, 10V
Input Capacitance (Ciss) Max @ Vds 646pF @ 30V
Gate Charge (Qg) Max @ Vgs 19nC @ 10V
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc)
Mounting Type Surface Mount

Key Features

  • High Efficiency: Low on-resistance (Rds(on)) of 60mΩ at 3.4A and 10V, reducing power losses and enhancing system efficiency.
  • Robust Performance: Drain to source voltage (Vdss) of 60V and continuous drain current (Id) of 4.5A at 25°C, making it suitable for demanding applications.
  • Advanced Technology: Part of Nexperia's TrenchMOS™ family, ensuring high reliability and performance.
  • Compact Packaging: Available in SC-74, SOT-457 packages, ideal for space-constrained designs.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C (TJ), ensuring reliability in various environmental conditions.

Applications

  • Power Management: Suitable for power supply units, DC-DC converters, and other power management circuits.
  • Switching Circuits: Ideal for high-frequency switching applications due to its low on-resistance and fast switching times.
  • Motor Control: Used in motor control circuits for efficient and reliable operation.
  • Automotive Systems: Applicable in automotive systems requiring high reliability and performance under varying conditions.
  • Industrial Automation: Suitable for industrial automation and control systems where high efficiency and robustness are essential.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMN55ENEH?

    The maximum drain to source voltage (Vdss) of the PMN55ENEH is 60V.

  2. What is the continuous drain current (Id) rating of the PMN55ENEH at 25°C?

    The continuous drain current (Id) rating of the PMN55ENEH at 25°C is 4.5A.

  3. What is the on-resistance (Rds(on)) of the PMN55ENEH?

    The on-resistance (Rds(on)) of the PMN55ENEH is 60mΩ at 3.4A and 10V.

  4. What is the operating temperature range of the PMN55ENEH?

    The operating temperature range of the PMN55ENEH is -55°C to 150°C (TJ).

  5. What type of packaging is available for the PMN55ENEH?

    The PMN55ENEH is available in SC-74, SOT-457 packages.

  6. What is the maximum gate to source voltage (Vgs) for the PMN55ENEH?

    The maximum gate to source voltage (Vgs) for the PMN55ENEH is ±20V.

  7. What is the input capacitance (Ciss) of the PMN55ENEH?

    The input capacitance (Ciss) of the PMN55ENEH is 646pF at 30V.

  8. What is the gate charge (Qg) of the PMN55ENEH?

    The gate charge (Qg) of the PMN55ENEH is 19nC at 10V.

  9. What are some common applications of the PMN55ENEH?

    The PMN55ENEH is commonly used in power management, switching circuits, motor control, automotive systems, and industrial automation.

  10. Is the PMN55ENEH RoHS compliant?

    Yes, the PMN55ENEH is RoHS compliant, but specific compliance details should be verified with the manufacturer or datasheet.

  11. How can I obtain the datasheet for the PMN55ENEH?

    You can obtain the datasheet for the PMN55ENEH from the official Nexperia website or through authorized distributors such as Utmel, ABS-Chip, or other electronic component suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):560mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
0 Remaining View Similar

In Stock

$0.15
4,361

Please send RFQ , we will respond immediately.

Same Series
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number PMN55ENEH PMN55ENEX PMN25ENEH
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 4.5A (Ta) 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V 60mOhm @ 3.4A, 10V 24mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.7V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 19 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 30 V 646 pF @ 30 V 597 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc) 560mW (Ta), 6.25W (Tc) 560mW (Ta), 6.25mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PDZ10B-QX
PDZ10B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC850CW/ZLX
BC850CW/ZLX
Nexperia USA Inc.
TRANS NPN SOT323
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
HEF4541BT,653
HEF4541BT,653
Nexperia USA Inc.
IC OSC PROG TIMER 36MHZ 14SOIC
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP