PMN55ENEH
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Nexperia USA Inc. PMN55ENEH

Manufacturer No:
PMN55ENEH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.5A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMN55ENEH is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS™ family, known for its advanced technology and reliability. The PMN55ENEH is designed for a wide range of applications requiring high efficiency, low power consumption, and robust performance.

With a drain to source voltage (Vdss) of 60V and a continuous drain current (Id) of 4.5A at 25°C, this MOSFET is suitable for various power management and switching applications. The device features a low on-resistance (Rds(on)) of 60mΩ at 3.4A and 10V, making it an excellent choice for minimizing power losses and enhancing overall system efficiency.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number PMN55ENEH
FET Type N-Channel MOSFET
Package / Case SC-74, SOT-457
Drain to Source Voltage (Vdss) 60V
Gate to Source Voltage (Vgs) Max ±20V
Continuous Drain Current (Id) @ 25°C 4.5A
On-Resistance (Rds(on)) Max @ Id, Vgs 60mΩ @ 3.4A, 10V
Input Capacitance (Ciss) Max @ Vds 646pF @ 30V
Gate Charge (Qg) Max @ Vgs 19nC @ 10V
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc)
Mounting Type Surface Mount

Key Features

  • High Efficiency: Low on-resistance (Rds(on)) of 60mΩ at 3.4A and 10V, reducing power losses and enhancing system efficiency.
  • Robust Performance: Drain to source voltage (Vdss) of 60V and continuous drain current (Id) of 4.5A at 25°C, making it suitable for demanding applications.
  • Advanced Technology: Part of Nexperia's TrenchMOS™ family, ensuring high reliability and performance.
  • Compact Packaging: Available in SC-74, SOT-457 packages, ideal for space-constrained designs.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C (TJ), ensuring reliability in various environmental conditions.

Applications

  • Power Management: Suitable for power supply units, DC-DC converters, and other power management circuits.
  • Switching Circuits: Ideal for high-frequency switching applications due to its low on-resistance and fast switching times.
  • Motor Control: Used in motor control circuits for efficient and reliable operation.
  • Automotive Systems: Applicable in automotive systems requiring high reliability and performance under varying conditions.
  • Industrial Automation: Suitable for industrial automation and control systems where high efficiency and robustness are essential.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMN55ENEH?

    The maximum drain to source voltage (Vdss) of the PMN55ENEH is 60V.

  2. What is the continuous drain current (Id) rating of the PMN55ENEH at 25°C?

    The continuous drain current (Id) rating of the PMN55ENEH at 25°C is 4.5A.

  3. What is the on-resistance (Rds(on)) of the PMN55ENEH?

    The on-resistance (Rds(on)) of the PMN55ENEH is 60mΩ at 3.4A and 10V.

  4. What is the operating temperature range of the PMN55ENEH?

    The operating temperature range of the PMN55ENEH is -55°C to 150°C (TJ).

  5. What type of packaging is available for the PMN55ENEH?

    The PMN55ENEH is available in SC-74, SOT-457 packages.

  6. What is the maximum gate to source voltage (Vgs) for the PMN55ENEH?

    The maximum gate to source voltage (Vgs) for the PMN55ENEH is ±20V.

  7. What is the input capacitance (Ciss) of the PMN55ENEH?

    The input capacitance (Ciss) of the PMN55ENEH is 646pF at 30V.

  8. What is the gate charge (Qg) of the PMN55ENEH?

    The gate charge (Qg) of the PMN55ENEH is 19nC at 10V.

  9. What are some common applications of the PMN55ENEH?

    The PMN55ENEH is commonly used in power management, switching circuits, motor control, automotive systems, and industrial automation.

  10. Is the PMN55ENEH RoHS compliant?

    Yes, the PMN55ENEH is RoHS compliant, but specific compliance details should be verified with the manufacturer or datasheet.

  11. How can I obtain the datasheet for the PMN55ENEH?

    You can obtain the datasheet for the PMN55ENEH from the official Nexperia website or through authorized distributors such as Utmel, ABS-Chip, or other electronic component suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):560mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SC-74, SOT-457
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Similar Products

Part Number PMN55ENEH PMN55ENEX PMN25ENEH
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 4.5A (Ta) 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V 60mOhm @ 3.4A, 10V 24mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.7V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 19 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 30 V 646 pF @ 30 V 597 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc) 560mW (Ta), 6.25W (Tc) 560mW (Ta), 6.25mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP
Package / Case SC-74, SOT-457 SC-74, SOT-457 SC-74, SOT-457

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