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BUK9Y19-100E,115
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Nexperia USA Inc. BUK9Y19-100E,115

Manufacturer No:
BUK9Y19-100E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 56A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The BUK9Y19-100E,115 is a high-efficiency N-channel MOSFET produced by Nexperia USA Inc. This component is designed using TrenchMOS technology and is packaged in an LFPAK56 (Power SO8) package. It is qualified to the AEC Q101 standard, ensuring its reliability and performance in automotive and other demanding applications.

Key Specifications

ParameterValue
Part NumberBUK9Y19-100E,115
ManufacturerNexperia USA Inc.
PackageLFPAK56 (Power SO8)
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)56 A
RDS(on) (On-State Resistance)19 mΩ
VGS(th) (Threshold Voltage)1-2 V
Qualification StandardAEC Q101

Key Features

  • High-efficiency N-channel MOSFET using TrenchMOS technology.
  • Low on-state resistance (RDS(on)) of 19 mΩ.
  • High current handling capability of up to 56 A.
  • Logic level gate drive for easy interface with microcontrollers and other logic circuits.
  • Qualified to AEC Q101 standard, suitable for automotive and other high-reliability applications.

Applications

  • Automotive systems, including powertrain, safety, and body control.
  • Industrial power supplies and motor control.
  • Renewable energy systems, such as solar and wind power.
  • High-power switching applications requiring low on-state resistance and high current handling.

Q & A

  1. What is the drain-source voltage (VDS) of the BUK9Y19-100E,115 MOSFET?
    The drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current (ID) is 56 A.
  3. What is the on-state resistance (RDS(on)) of the BUK9Y19-100E,115?
    The on-state resistance (RDS(on)) is 19 mΩ.
  4. What package type is used for the BUK9Y19-100E,115?
    The package type is LFPAK56 (Power SO8).
  5. Is the BUK9Y19-100E,115 qualified to any specific automotive standard?
    Yes, it is qualified to the AEC Q101 standard.
  6. What technology is used in the BUK9Y19-100E,115 MOSFET?
    The BUK9Y19-100E,115 uses TrenchMOS technology.
  7. What are some typical applications for the BUK9Y19-100E,115?
    Typical applications include automotive systems, industrial power supplies, motor control, and renewable energy systems.
  8. What is the threshold voltage (VGS(th)) range for this MOSFET?
    The threshold voltage (VGS(th)) range is 1-2 V.
  9. Can the BUK9Y19-100E,115 be used in high-power switching applications?
    Yes, it is suitable for high-power switching applications due to its low on-state resistance and high current handling capability.
  10. Where can I find detailed specifications and datasheets for the BUK9Y19-100E,115?
    Detailed specifications and datasheets can be found on the Nexperia website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:5085 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK9Y19-100E,115 BUK9Y12-100E,115 BUK9Y15-100E,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 85A (Tc) 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 15A, 10V 12mOhm @ 25A, 5V 14.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 5 V 64 nC @ 5 V 45.8 nC @ 5 V
Vgs (Max) ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 5085 pF @ 25 V 7973 pF @ 25 V 6139 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 167W (Tc) 238W (Tc) 195W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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